R. Bowman

Application of the homotopy analysis method to the Poisson–Boltzmann equation for semiconductor devices

J. Revelli, C. J. Nassar, R. Bowman, 2011 .

An analytical model of SiC MESFETs incorporating trapping and thermal effects

S. S. Islam, S. Mukherjee, R. Bowman, 2003, International Semiconductor Device Research Symposium, 2003.

Single Fermi Level Thin-Film CMOS on Glass: The Behavior of Enhancement-Mode PMOSFETs From Cutoff Through Accumulation

C. Williams, C. J. Nassar, R. Bowman, 2009, IEEE Transactions on Electron Devices.

Characterisation of MBE-grown a-Sn films and a-Sn1-xGex alloys

H. Höchst, R. Bowman, M. Engelhardt, 1990 .

The 1/f Noise Performance for TFTs Fabricated in Three TFT Technologies: Monocrystalline Silicon on Glass, Low Temperature Polysilicon on Glass, and Silicon on Insulator

Jin Jang, T. Tredwell, E. Mozdy, 2010 .

Passive Sensing Node Network for Monitoring Performance of RF Connector-Coaxial Cable System

Joseph F. Revelli, Robert J. Bowman, Noah Montena, 2014 .