T. Simoyama

发表

Study on the effects of the Si capping layer growth conditions on the leakage current of Ge photodetector

T. Mogami, J. Fujikata, K. Kinoshita, 2017 .

All-optical logic based on ultrafast gain and index dynamics in a semiconductor optical amplifier

H. de Waardt, H.J.S. Dorren, T. Hasama, 2004, IEEE Journal of Selected Topics in Quantum Electronics.

Uncooled, low-driving-current 25.8 Gbit/s direct modulation using 1.3 μm AlGaInAs MQW distributed-reflector lasers

Mitsuru Ekawa, Ayahito Uetake, T. Simoyama, 2012 .

1.3-μm-Wavelength AlGaInAs Multiple-Quantum-Well Semi-Insulating Buried-Heterostructure Distributed-Reflector Laser Arrays on Semi-Insulating InP Substrate

M. Matsuda, K. Takabayashi, Tsuyoshi Yamamoto, 2015, IEEE Journal of Selected Topics in Quantum Electronics.

High-Speed Directly Modulated Distributed-Reflector Lasers

M. Matsuda, K. Takabayashi, T. Yamamoto, 2014, 2014 International Semiconductor Laser Conference.

Simultaneous 40-Gbps direct modulation of 1.3-µm wavelength AlGaInAs distributed-reflector laser arrays on semi-insulating InP substrate

M. Matsuda, K. Takabayashi, Tsuyoshi Yamamoto, 2013, 2013 International Conference on Indium Phosphide and Related Materials (IPRM).

Delayed interferometer based Si-wire WDM demultiplexers fabricated by phase controllable and productive 300-mm wafer-scale ArF-immersion lithography technology

Seok-Hwan Jeong, Yu Tanaka, Takasi Simoyama, 2014, OFC 2014.

Silicon-photonics devices for chip to chip communications

Shinsuke Tanaka, Seok-Hwan Jeong, Yu Tanaka, 2015, 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR).

Indices of refraction of AlGaAsSb by an optical waveguide technique

H. Ishikawa, T. Mozume, T. Simoyama, 2007 .

Ultralow Intersubband Absorption Saturation Intensity at Communication Wavelength Achieved in Novel Strain Compensated InGaAs/AlAs/AlAsSb Quantum Wells Grown by Molecular Beam Epitaxy

Teruo Mozume, Nikolai Georgiev, Haruhiko Yoshida, 2003 .

Intersubband absorption saturation in InGaAs-AlAs-AlAsSb coupled quantum wells

Hiroshi Ishikawa, Teruo Mozume, Takasi Simoyama, 2003 .

Understanding the ultra-low intersubband saturation intensity in InGaAs-AlAsSb quantum wells

Hiroshi Ishikawa, Teruo Mozume, Nikolai Georgiev, 2003 .

Ultrafast all-optical switching using near-infrared inter-subband transition in an InGaAs/AlAs/AlAsSb/InP quantum well structure

H. Yoshida, N. Georgiev, T. Simoyama, 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

Ultrafast all-optical switching using intersubband transitions in InGaAs/AlAsSb quantum well structures

Hiroshi Ishikawa, Arup Neogi, Tomoyuki Akiyama, 2002 .

Ultrafast All-Optical Switches using Intersubband Transition in Quantum Wells

H. Ishikawa, T. Hasama, R. Akimoto, 2006, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings.

Optimization of Operation Conditions of All-Optical Switches Based on Intersubband Absorption Saturation

H. Ishikawa, H. Yoshida, S. Sekiguchi, 2005, 2005 Pacific Rim Conference on Lasers & Electro-Optics.

Enhancement of All-Optical Cross Phase Modulation in InGaAs/AlAsSb Coupled Quantum Wells Using InAlAs Coupling Barriers

T. Hasama, H. Ishikawa, T. Simoyama, 2008, IEEE Photonics Technology Letters.

Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

H. Ishikawa, H. Yoshida, A. Gopal, 2004 .

Ultra-low intersubband absorption saturation intensity in InGaAs/AlAs/AlAsSb coupled double quantum wells with AlAs diffusion-stopping layers

Hiroshi Ishikawa, T. Simoyama, Teruo Mozume, 2003, International Conference onIndium Phosphide and Related Materials, 2003..

Well-width and doping-density dependence of 1.35 μm intersubband transition in InGaAs/AlAsSb quantum wells

Hiroshi Ishikawa, Teruo Mozume, Nikolai Georgiev, 2002 .

All-optical demultiplexing of 160–10Gbit∕s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs∕AlAs∕AlAsSb quantum well

Shu Namiki, Hiroshi Ishikawa, Teruo Mozume, 2007 .

InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems

H. Ishikawa, H. Yoshida, A. Gopal, 2003, IEEE Photonics Technology Letters.

1.35 /spl mu/m intersubband transition in InGaAs/AlAsSb single quantum wells

H. Ishikawa, H. Yoshida, T. Simoyama, 2002 .

Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well

O. Wada, A. Neogi, H. Ishikawa, 2001 .

Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

Hiroshi Ishikawa, Teruo Mozume, Takasi Simoyama, 2007 .

Si-nanowire-based multistage delayed Mach-Zehnder interferometer optical MUX/DeMUX fabricated by an ArF-immersion lithography process on a 300 mm SOI wafer.

Seok-Hwan Jeong, Ken Morito, Yu Tanaka, 2014, Optics letters.

A 25 Gbps silicon photonic transmitter and receiver with a bridge structure for CPU interconnects

Takuji Yamamoto, Masaya Kibune, Tamer Riad, 2015, 2015 Optical Fiber Communications Conference and Exhibition (OFC).

Ultralow-Power (1.59 mW/Gbps), 56-Gbps PAM4 Operation of Si Photonic Transmitter Integrating Segmented PIN Mach–Zehnder Modulator and 28-nm CMOS Driver

Toshihiko Mori, Seok-Hwan Jeong, Shinsuke Tanaka, 2018, Journal of Lightwave Technology.

Low-loss, flat-topped and spectrally uniform silicon-nanowire-based 5th-order CROW fabricated by ArF-immersion lithography process on a 300-mm SOI wafer.

Minoru Ohtsuka, Nobuyuki Yokoyama, Miyoshi Seki, 2013, Optics express.

70 Gbaud Operation of All-Silicon Mach–Zehnder Modulator based on Forward-Biased PIN Diodes and Passive Equalizer

Shinsuke Tanaka, Yohei Sobu, Yu Tanaka, 2019, 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC).

Ultrafast refractive-index dynamics in a multiquantum-well semiconductor optical amplifier

H. de Waardt, H.J.S. Dorren, D. Lenstra, 2003, IEEE Photonics Technology Letters.