S. Nishikawa

发表

Dephasing time characterization of InAs quantum dots by four-wave mixing measurement

O. Wada, H. Ishikawa, T. Akiyama, 2002 .

Optimum Electrode Materials for Ta2O5 Capacitors for High- and Low-Temperature Processes

S. Nishikawa, H. Matsuhashi, 1994 .

An MMI-based wavelength combiner employing non-uniform refractive index distribution.

T. Koike-Akino, K. Kojima, K. Parsons, 2014, Optics express.

Hiroshi Ishikawa, Yoshimasa Sugimoto, Kiyoshi Asakawa, 2003 .

Application of numerical optimization to the design of InP-based wavelength combiners

Toshiaki Koike-Akino, Keisuke Kojima, Kieran Parsons, 2014 .

An MMI-Based 4-Beam Combiner with Spline-Curved Index Step

T. Koike-Akino, K. Kojima, K. Parsons, 2015 .

40Gbps-capable Integrated Wavelength Converter on InP

T. Aoyagi, T. Miyahara, Y. Miyazaki, 2007 .

Anomalously Enhanced Boron Diffusion in the Base of SiGe HBTs Induced by Phosphorus Implants into Polysilicon Emitters

S. Nishikawa, S. Ito, 1996 .

Pattern dependence in selective epitaxial Si1−xGex growth using reduced‐pressure chemical vapor deposition

S. Ito, S. Nishikawa, T. Nakamura, 1995 .

Influence of Deposition Conditions on Properties of Hydrogenated Amorphous Silicon Prepared by RF Glow Discharge

S. Nishikawa, Tsukasa Watanabe, H. Kakinuma, 1985 .

Four-Channel Integrated Receiver with a Built-In Spatial Demultiplexer Optics for 100 Gb/s Ethernet

Satoshi Nishikawa, Hiroshi Aruga, Keita Mochizuki, 2013, IEICE Trans. Electron..

Photoluminescence imaging of phosphor particles using near‐field optical microscope with UV light excitation

T. Isu, S. Nishikawa, 1999, Journal of microscopy.

Intrinsic stress and hydrogen bonding in glow‐discharge amorphous silicon films

S. Nishikawa, Tsukasa Watanabe, H. Kakinuma, 1986 .

Influence of RF Power on Properties of a-Si1-xGex:H Prepared by RF Glow Discharge Decomposition

S. Nishikawa, Tsukasa Watanabe, H. Kakinuma, 1986 .

Thickness dependence of staebler-wronski effect in a-Si:H

S. Nishikawa, Tsukasa Watanabe, H. Kakinuma, 1983 .

Amorphous carbon coating on amorphous silicon photoreceptors

H. Fukuda, S. Nishikawa, Tsukasa Watanabe, 1987 .

Optical 3R Wavelength Conversion by a combination of Self-pulsating DFB Laser and SOA-based Mach-Zehnder Interferometer

T. Nishimura, T. Aoyagi, Y. Tokuda, 2005 .

PREPARATION OF C60 SINGLE CRYSTALLINE THIN FILM BY IONIZED CLUSTER BEAM DEPOSITION AND ION IMPLANTATION INTO SINGLE CRYSTALLINE C60 THIN FILM

S. Isoda, S. Nishikawa, O. Wada, 1996 .

Semiconductor Quantum Dots: Site-Controlled Self-Organization

Tao Yang, K. Asakawa, S. Nishikawa, 2014 .

Spatially site-controlled InAs quantum dot lattices

K. Asakawa, S. Nishikawa, S. Kohmoto, 2002 .

Site-controlled self-organization of InAs quantum dots

K. Asakawa, T. Nishimura, T. Ishikawa, 2002 .

Site control of InAs quantum dots on GaAs surfaces patterned by in situ electron-beam lithography

K. Asakawa, T. Nishimura, T. Ishikawa, 2000 .

Photoelectric properties based on photo-induced electron transfer processes in flavin–porphyrin hetero-type Langmuir–Blodgett films

S. Isoda, S. Ueyama, S. Nishikawa, 2003 .

Quantum electron tunneling in flavin–porphyrin hetero-type Langmuir–Blodgett films

S. Isoda, H. Miyasaka, S. Ueyama, 2004 .

Influence of annealing ambients on ZrSi2 formation

T. Yamaji, S. Ohno, S. Nishikawa, 1990 .

Arf Laser-Induced Chemical-Vapor Deposition of Tungsten for Gate Electrodes

S. Nishikawa, H. Matsuhashi, S. Ohno, 1988 .

Deposition of a-SiNx Films by ArF Laser Induced CVD as Diagnosed by Optical Emission Spectroscopy

S. Ushio, S. Nishikawa, T. Ishida, 1987 .

Photo-induced electron transfer in molecular heterojunctions using flavin-porphyrin Langmuir-Blodgett multilayers

M. Maeda, S. Isoda, S. Ueyama, 1992 .

Photoluminescence characterization of type II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

A. Neogi, H. Yoshida, N. Georgiev, 2000 .

Optical nonlinear properties of InAs quantum dots by means of transient absorption measurements

Kiyoshi Asakawa, Hitoshi Nakamura, Shigeru Kohmoto, 2003 .

Different responses of localized and extended excitons to exciton–exciton scattering manifested in excitation density-dependent photoluminescence excitation spectra

Y. Okada, O. Wada, K. Akahane, 2001 .

Optical Characterization of Merocyanine Langmuir-Blodgett Layers

Y. Tokura, K. Iriyama, S. Nishikawa, 1986 .

Photo-induced structural disorder in Langmuir-Blodgett films of polydiacetylenes

Y. Tokura, S. Nishikawa, T. Koda, 1986 .

Structural and optical properties of Eu-doped GaN nanocolumns on (111) Si substrates grown by RF-plasma-assisted molecular beam epitaxy

K. Yamane, A. Wakahara, K. Kishino, 2016 .

Three-dimensional site control of self-organized InAs quantum dots by in situ scanning tunneling probe-assisted nanolithography and molecular beam epitaxy

Kiyoshi Asakawa, Hitoshi Nakamura, Shigeru Kohmoto, 2002 .

A Selective Interaction Between Cation and Separator Membrane in Lithium Secondary Batteries

Yuria Saito, S. Takeda, S. Nishikawa, 2017 .

Factors Controlling the Ionic Mobility of Lithium Electrolyte Solutions in Separator Membranes

Yuria Saito, S. Nishikawa, Wataru Morimura, 2016 .

Ion Transport in Separator Membranes of Lithium Secondary Batteries

Yuria Saito, S. Nishikawa, Wataru Morimura, 2015 .

Formation of extended states in disordered two-dimensional In0.4Ga0.6As/GaAs(311)B quantum dot superlattices

Y. Okada, O. Wada, K. Akahane, 2000 .

Lateral-Coupling-Induced Modification of Density of States and Exciton Dynamics in High-Density Ordered In0.4Ga0.6As/GaAs(311)B Quantum Dot Arrays

O. Wada, K. Akahane, S. Lan, 2002 .

Comparison of Optical Properties of In0.4Ga0.6As/GaAs(311)B Two-Dimensional Quantum Dot Superlattices and Quantum Wells

Y. Okada, O. Wada, H. Ishikawa, 2002 .

Application of photonic crystal defects in constructing all-optical switches, optical delay lines and low-cross-talk waveguide intersections for ultrashort optical pulses

Tao Yang, Yoshimasa Sugimoto, Sheng Lan, 2002, SPIE ITCom.

Design of impurity band-based photonic crystal waveguides and delay lines for ultrashort optical pulses

Hiroshi Ishikawa, Osamu Wada, Sheng Lan, 2001 .

Leveraging deep photonic band gaps in photonic crystal impurity bands

Osamu Wada, Sheng Lan, Satoshi Nishikawa, 2001 .

Reduction of transient boron diffusion in preamorphized Si by carbon implantation

Tetsuo Yamaji, Akira Tanaka, S. Nishikawa, 1992 .

Influence of the Morphological Characteristics of Separator Membranes on Ionic Mobility in Lithium Secondary Batteries

Yuria Saito, S. Nishikawa, Wataru Morimura, 2017 .

Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiOx as Gate Dielectrics using Monoenergetic Positron Beams

A. Uedono, A. Ogura, T. Ohdaira, 2004 .

Photoluminescence Characteristics of InAs Quantum Dots Grown by STM/MBE Site-Control Technique

O. Wada, K. Asakawa, T. Ishikawa, 2001 .

Temperature dependence of epitaxial growth of Al on Si(111) by chemical vapor deposition

T. Yamaji, S. Nishikawa, K. Tani, 1992 .

Elimination of secondary defects in preamorphized Si by C + implantation

T. Yamaji, S. Nishikawa, 1993 .

Transient Photocurrent Based on Photoinduced Electron Transfer Processes in Flavin-Porphyrin Hetero Langmuir-Blodgett Monolayers

S. Ueyama, S. Nishikawa, Kouichi Akiyama, 1995 .

Analysis of defect coupling in one- and two-dimensional photonic crystals

H. Ishikawa, S. Lan, K. Asakawa, 2002 .