Anne Lauwers

Integration of tall triple-gate devices with inserted TaxNy gate in a 0.274µm2 6T-SRAM cell and advanced CMOS logic circuits

Vincent Wiaux, Geert Vandenberghe, Patrick Jaenen, 2005 .

Ni silicide morphology on small features

Karen Maex, Jorge Kittl, Muriel de Potter de ten Broeck, 2004 .

In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines

Karen Maex, Hugo Bender, An Steegen, 2001 .

Effects of alloying on properties of NiSi for CMOS applications

Karen Maex, Jorge Kittl, J. Kittl, 2004 .

Migrating from planar to FinFET for further CMOS scaling: SOI or Bulk?

Rita Rooyackers, Liesbeth Witters, C. Ortolland, 2009, ESSDERC 2009.