Maria J. Martin

Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si1-xGex heterostructures

Daniel Pardo, J. E. Velázquez, Maria J. Martin, 2000 .

Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm

Tomas Gonzalez, Daniel Pardo, T. González, 1996 .

Influence of systematic gate alignment variations on static characteristics in DG-SB-MOSFETs

Elena Pascual, Raul Rengel, Jose M. Iglesias, 2015, 2015 10th Spanish Conference on Electron Devices (CDE).