Yoshihiro Yamaguchi

200/spl deg/C high-temperature and high-speed operation of 440 V lateral IGBTs on 1.5 /spl mu/m thick SOI

Akio Nakagawa, Tomoko Matsudai, N. Yasuhara, 1993, Proceedings of IEEE International Electron Devices Meeting.

New Anode Structure for High Voltage Lateral IGBTs

Akio Nakagawa, T. Ogura, N. Yasuhara, 1990 .

Improved Bipolar-Mode MOSFETs(IGBT) with Self-Aligning Technique and Wafer Bonding(SDB) -Why is the Bipolar-Mode MOSFET SOA Large?-

Akio Nakagawa, Yoshihiro Yamaguchi, Kiminori Watanabe, 1987 .

New 1200 V MOSFET structure on SOI with SIPOS shielding layer

Akio Nakagawa, Hideyuki Funaki, K. Hirayama, 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

500V three phase inverter ICs based on a new dielectric isolation technique

Akio Nakagawa, T. Ogura, K. Watanabe, 1992, Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.