Sundgren

发表

Structural characterization of precious-mean quasiperiodic Mo/V single-crystal superlattices grown by dual-target magnetron sputtering.

Severin, Yamamoto, Wahlström, 1990, Physical review. B, Condensed matter.

Superhard and elastic carbon nitride thin films having fullerenelike microstructure.

J. Sundgren, S. Stafström, Sundgren, 1995, Physical review letters.

X-ray diffraction from amorphous Ge/Si Cantor superlattices.

Birch, Sundgren, Dulea, 1995, Physical review. B, Condensed matter.

Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy.

Greene, Barnett, Markert, 1989, Physical review. B, Condensed matter.

Domain structure in epitaxial metastable zinc-blende (GaAs)1-x(Ge2)x(001) alloys.

Greene, Romano, Robertson, 1987, Physical review. B, Condensed matter.

Interface effects of hydrogen uptake in Mo/V single-crystal superlattices.

Karlsson, Birch, Sundgren, 1991, Physical review. B, Condensed matter.

Low-angle neutron and x-ray scattering of hydrogenated and deuterated Mo/V superlattices.

Birch, Sundgren, Vergnat, 1994, Physical review. B, Condensed matter.

X-ray-diffraction mapping of epitaxial YBa2Cu3O7-x thin films: Determination of in-plane epitaxy and a-, b-, and c-axis lengths in films with varying oxygen deficiency.

Bo Han, Sundgren, Helmersson, 1993, Physical review. B, Condensed matter.

delta -function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy.

Greene, Yao, Markert, 1992, Physical review. B, Condensed matter.

Coordination determination of In on Si(100) from synchrotron photoemission studies.

Greene, Lin, Rich, 1987, Physical review letters.

Strain-induced growth-mode transition of V in epitaxial Mo/V(001) superlattices.

Birch, Radnoczi, Sundgren, 1996, Physical review. B, Condensed matter.