H. Sazawa

发表

High-performance GaAs-based metal–oxide–semiconductor heterostructure field-effect transistors with atomic-layer-deposited Al2O3 gate oxide and in situ AlN passivation by metalorganic chemical vapor deposition

N. Fukuhara, M. Hata, T. Osada, 2014 .

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

N. Fukuhara, M. Hata, T. Osada, 2014 .

Ion-channel sensors.

Y. Umezawa, H. Sazawa, M. Sugawara, 1987, Analytical chemistry.

A low-leakage and reduced current collapse AlGaN/GaN heterojunction field effect transistor with AlOx gate insulator formed by metal-organic chemical vapor deposition

T. Sakurai, K. Akimoto, M. Shimizu, 2008 .

Correlation between micropipes on SiC substrate and dc characteristics of AlGaN∕GaN high-electron mobility transistors

H. Okumura, T. Mitani, S. Nakashima, 2006 .

Reduction in Buffer Leakage Current with Mn-Doped GaN Buffer Layer Grown by Metal Organic Chemical Vapor Deposition

M. Shimizu, M. Hata, T. Ide, 2013 .

Evaluation of AlGaN/GaN-HFET with HfAlO gate insulator

M. Shimizu, H. Okumura, A. Kinoshita, 2007 .

rf‐MBE growth and characterizations of AlGaN/GaN HEMTs on vicinal sapphire (0001) substrates

H. Okumura, X. Shen, H. Sazawa, 2008 .

Effect of the membrane surface charge on the host-guest complex of valinomycin in a synthetic lipid monolayer at the air-water interface

Y. Umezawa, H. Sazawa, M. Sugawara, 1992 .

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

N. Fukuhara, M. Hata, T. Osada, 2015 .

High-mobility 2D electron gas in carbon-face 3C-SiC/4H-SiC heterostructure with single-domain 3C-SiC layer

H. Yamaguchi, H. Sazawa, 2022, Applied Physics Letters.

Cathodoluminescence Study of 3C-SiC Epilayers Grown on 4H-SiC Substrates

T. Sekiguchi, H. Sazawa, W. Yi, 2023, Journal of Electronic Materials.