Ye Jia

Interface State Density in Atomic Layer Deposited SiO 2 / β-Ga 2 O 3 ( 2̄ 01 ) MOSCAPs

Uttam Singisetti, U. Singisetti, Ke Zeng, 2016 .

Interface characterization of atomic layer deposited Al2O3 on m‐plane GaN

J. S. Wallace, Elena Echeverria, U. Singisetti, 2017 .

Atomic Layer Deposition of Hafnium(IV) Oxide on Graphene Oxide: Probing Interfacial Chemistry and Nucleation by using X-ray Absorption and Photoelectron Spectroscopies.

D. Fischer, S. Banerjee, U. Singisetti, 2015, Chemphyschem : a European journal of chemical physics and physical chemistry.

Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

J. S. Wallace, A. Dabiran, U. Singisetti, 2016, Journal of Electronic Materials.

Electrical characterization of atomic layer deposited Al2O3/InN interfaces

A. Dabiran, U. Singisetti, Ye Jia, 2016 .

Interface State Density in Atomic Layer Deposited SiO 2 / $\beta $ -Ga 2 O 3 ( $\bar {2}01$ ) MOSCAPs

Uttam Singisetti, U. Singisetti, Ke Zeng, 2016 .

Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ( 2¯01)

J. S. Wallace, U. Singisetti, Ke Zeng, 2015 .

Interface characterization of atomic layer deposited high-k on non-polar GaN

U. Singisetti, Ke Zeng, Ye Jia, 2017 .