Toshi-kazu Suzuki

发表

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

M. Kudo, H. Shih, Toshi-kazu Suzuki, 2014 .

AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High- $k$ Oxynitride $\hbox{TaO}_{x} \hbox{N}_{y}$ Gate Dielectric

T. Sato, M. Takikawa, Toshi-kazu Suzuki, 2013, IEEE Electron Device Letters.

Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal–Insulator–Semiconductor Structures

M. Kudo, M. Akabori, H. Shih, 2012 .

Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AlGaN-GaN MOSFETs

Toshi-kazu Suzuki, J. Okayasu, Taku Sato, 2018, Applied Physics Letters.

Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: A comparison with Schottky devices

M. Kudo, H. Shih, Toshi-kazu Suzuki, 2014 .

Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

M. Kudo, H. Shih, Toshi-kazu Suzuki, 2012 .

Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistor

M. Kudo, M. Akabori, H. Shih, 2012 .

Low-Frequency Noise in AlTiO/AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors

H. Shih, Toshi-kazu Suzuki, S. Le, 2015 .

Fabrication and characterization of BN/AlGaN/GaN metal‐insulator‐semiconductor heterojunction field‐effect transistors with sputtering‐deposited BN gate dielectric

M. Kudo, H. Shih, Toshi-kazu Suzuki, 2013 .

Transparent Oxide Thin-Film Transistors Using n-(In2O3)0.9(SnO2)0.1/InGaZnO4 Modulation-Doped Heterostructures

M. Ikeda, S. Taniguchi, M. Yokozeki, 2011 .

Tunneling Spectroscopy of InAs Wetting Layers and Self-Assembled Quantum Dots: Resonant Tunneling through Two- and Zero-Dimensional Electronic States

K. Nomoto, K. Taira, Toshi-kazu Suzuki, 1997 .

Spin-orbit interactions in high In-content InGaAs/InAlAs inverted heterojunctions for Rashba spintronic devices

S. Yamada, Hyonkwang Choi, M. Akabori, 2008 .

Infrared rapid annealing of Zn‐implanted GaAs

H. Sakurai, M. Arai, Toshi-kazu Suzuki, 1983 .

A STATISTICAL MODEL OF QUANTUM DOT ARRAYS WITH COULOMB COUPLING

K. Nomoto, Toshi-kazu Suzuki, R. Ugajin, 1995 .

Experimental evidence of surface conduction in AlSb–InAs tunneling diodes

K. Nomoto, K. Taira, Toshi-kazu Suzuki, 1999 .

Diameter dependence of current–voltage characteristics of ultrasmall area AlSb–InAs resonant tunneling diodes with diameters down to 20 nm

Hiroshi Hiroshima, Masanori Komuro, K. Taira, 1997 .

Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering

Toshi-kazu Suzuki, D. D. Nguyen, Takehiro Isoda, 2021, Journal of Applied Physics.

Interface charge engineering in AlTiO/AlGaN/GaN metal–insulator–semiconductor devices

Toshi-kazu Suzuki, D. D. Nguyen, 2020 .

Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics

Toshi-kazu Suzuki, S. Le, D. D. Nguyen, 2018 .

Investigation of orientation effect on contact resistance in selectively doped AlGaAs/GaAs heterostructures

Y. Mori, F. Nakamura, M. Arai, 1986 .

GHz response of metamorphic InAlAs metal–semiconductor–metal photodetector on GaAs substrate

T. Maruyama, K. Iiyama, K. Maekita, 2014 .

Single electron–photon logic device using coupled quantum dots: Computation with the Fock ground state

Kazumasa Nomoto, K. Nomoto, I. Hase, 1996 .

Degradation of fluorescent organic light emitting diodes caused by quenching of singlet and triplet excitons

H. Murata, Savanna Lloyd, Toshi-kazu Suzuki, 2020 .

Mechanism of low-temperature-annealed Ohmic contacts to AlGaN/GaN heterostructures: A study via formation and removal of Ta-based Ohmic-metals

Toshi-kazu Suzuki, Shota Kiuchi, Taku Sato, 2022, Applied Physics Letters.

Electrical characterization of AlGaN/GaN heterostructures under Ohmic metals by using multi-probe Hall devices

Toshi-kazu Suzuki, Shota Kiuchi, K. Uryu, 2021, Applied Physics Letters.

Weak antilocalization measurements on a 2-dimensional electron gas in an InGaSb/InAlSb heterostructure

T. Schäpers, S. Yamada, V. Guzenko, 2006 .

Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates

M. Kudo, C. T. Nguyen, M. Akabori, 2010 .

Electron mobility anisotropy in InAs/GaAs(001) heterostructures

Toshi-kazu Suzuki, S. Le, 2021 .

Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In 0.89 Ga 0.11 Sb / In 0.88 Al 0.12 Sb by magnetoresistance measurements

T. Schäpers, S. Yamada, V. Guzenko, 2008 .

An InAs/high-k/low-k structure: Electron transport and interface analysis

Y. Oshima, Toshi-kazu Suzuki, S. Le, 2017 .

Current conduction mechanisms and breakdown fields of AlxTiyO/n-GaAs(001) metal-insulator-semiconductor structures

M. Kudo, Toshi-kazu Suzuki, T. Ui, 2013 .

Electron mobility enhancement in n-GaN under Ohmic-metal

Toshi-kazu Suzuki, S. Le, K. Uryu, 2023, AIP Advances.

Spin splitting in InGaSb/InAlSb 2DEG having high indium content

S. Yamada, M. Akabori, Toshi-kazu Suzuki, 2006 .

High-temperature electron transport in metamorphic InGaAs/InAlAs heterostructures

Satoshi Taniguchi, Hideki Ono, Toshi-kazu Suzuki, 2005 .

Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs

Satoshi Taniguchi, S. Taniguchi, Hideki Ono, 2004 .

Low-frequency noise in InAs films bonded on low-k flexible substrates

Toshi-kazu Suzuki, S. Le, T. Ui, 2015 .

Electron correlations in coupled quantum dots

K. Nomoto, Toshi-kazu Suzuki, R. Ugajin, 1994 .