I. Saito

发表

A transparent ultraviolet triggered amorphous selenium p-n junction

Kenichi Soga, Gehan A. J. Amaratunga, Mauro Overend, 2011 .

Modifying the Electronic Properties of Se/n‐Si Heterostructure Using Electrolysis

D. Chua, T. Yamada, K. Okano, 2018, physica status solidi (b).

Response time of amorphous selenium based photodetector driven by diamond cold cathode

T. Yamada, K. Okano, I. Saito, 2012, 2018 31st International Vacuum Nanoelectronics Conference (IVNC).

Electrolysis as a controllable method for establishing p-n junctions in multi-nanolayer films of amorphous selenium

D. Chua, T. Yamada, K. Okano, 2017 .

Formation of p‐n Junction in a‐Se Thin Film and Its Application to High Sensitivity Photodetector Driven by Diamond Cold Cathode

H. Mimura, D. Chua, T. Yamada, 2017 .

Electronic properties and potential applications of the heterojunction between silicon and multi-nanolayer amorphous selenium

D. Chua, T. Yamada, K. Okano, 2017 .

Characterization of a‐Se p–i–n junction fabricated using bidirectional electrolysis in NaCl(aq)

D. Chua, A. Koh, T. Yamada, 2015 .

“a-Se junction” based photodetector driven by diamond cold cathode

H. Mimura, D. Chua, T. Yamada, 2014, 2014 27th International Vacuum Nanoelectronics Conference (IVNC).

Development of a high sensitivity photodetector using amorphous selenium and diamond cold cathode

D. Chua, A. Koh, K. Okano, 2013, 2013 IEEE 5th International Nanoelectronics Conference (INEC).

Characterization of a-Se p-n junction fabricated using electrolysis in NaCl aq

N. Sano, D. Chua, A. Koh, 2013, 2013 IEEE 5th International Nanoelectronics Conference (INEC).

High quantum efficiency UV detection using a-Se based photodetector

Yusuke Mori, Tomoaki Masuzawa, Takatoshi Yamada, 2013 .

Conditions for a carrier multiplication in amorphous-selenium based photodetector

Tomoaki Masuzawa, Takatoshi Yamada, Ken Okano, 2013 .

Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)–arsenic selenide (As2Se3) multi-layered thin film

D. Zahn, G. Amaratunga, D. Chua, 2013 .

Amorphous selenium (a-Se) based wide wave-range photodetector driven by diamond cold cathode

T. Yamada, K. Okano, I. Saito, 2013, 2013 26th International Vacuum Nanoelectronics Conference (IVNC).

Carrier multiplication in a photodetector driven by diamond cold cathode

D. Chua, A. Koh, K. Okano, 2012, 25th International Vacuum Nanoelectronics Conference.

Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements

Gehan A. J. Amaratunga, William I. Milne, Kousuke Oonuki, 2005 .

Amorphous selenium based photodetector driven by field emission current from N-doped diamond cold cathode

G. Amaratunga, N. Rupesinghe, T. Yamada, 2006 .

Characterizations of a-Se based photodetectors using X-ray photoelectron spectroscopy and Raman spectroscopy

Gehan A. J. Amaratunga, William I. Milne, Dietrich R. T. Zahn, 2007 .

Sensitivity to red/green/blue illumination of amorphous selenium based photodetector driven by nitrogen (N)-Doped CVD diamond

Gehan A. J. Amaratunga, Hisato Yamaguchi, Tomoaki Masuzawa, 2008 .

Clarification of band structure at metal-diamond contact using device simulation

T. Yamada, H. Yamaguchi, K. Okano, 2008 .

Development of arrayed diamond emitter for photo imaging application

H. Mimura, D. Chua, K. Okano, 2015, 2015 28th International Vacuum Nanoelectronics Conference (IVNC).

9.2: Correlation between low threshold emission and C-N bond in nitrogen-doped diamond

T. Yamada, K. Okano, Y. Kudo, 2010, International Vacuum Nanoelectronics Conference.

Electron Emission Mechanism of Diamond

Y. Takakuwa, H. Yamaguchi, K. Okano, 2006, 2006 19th International Vacuum Nanoelectronics Conference.

Electron Emission Mechanism of Doped CVD Diamond Characterised by Combined XPS/UPS/FES System

M. Takahashi, Y. Takakuwa, H. Yamaguchi, 2006, 2006 19th International Vacuum Nanoelectronics Conference.

Electron emission mechanism of diamond characterised by combined XPS/UPS/FES

B. Pate, H. Yamaguchi, K. Okano, 2005, 2005 International Vacuum Nanoelectronics Conference.

Electron emission mechanism of diamond characterised by combined XPS/UPS/FES

B. Pate, T. Yamada, H. Yamaguchi, 2005, IVNC 2005.

Heterojunction between the delafossite TCO n-copper indium oxide and p-Si for solar cell applications

R. R. Philip, K. Okano, I. Saito, 2016 .

Electron emission from conduction band of diamond with negative electron affinity

Y. Takakuwa, T. Yamada, H. Yamaguchi, 2009, 0910.2189.

Spectroscopic ellipsometry of amorphous Se superlattices

D. Zahn, G. Salvan, D. Chua, 2021, Journal of Physics D: Applied Physics.

Correlation between low threshold emission and C–N bond in nitrogen-doped diamond filmsa)

S. Yamasaki, D. Chua, A. Koh, 2011 .

Field emission mechanism of oxidized highly phosphorus-doped homoepitaxial diamond (111)

B. Rezek, N. Fujimori, D. Takeuchi, 2005 .

The Origin of Field-induced Electron Emission from N-doped CVD Diamond Characterized by Combined XPS/UPS/FES System

Y. Takakuwa, T. Yamada, H. Yamaguchi, 2007 .

Electron Emission Mechanism of Doped CVD Diamond Characterized Using Combined XPS/UPS/FES System

Y. Takakuwa, T. Yamada, H. Yamaguchi, 2006 .

Electron emission mechanism of hydrogenated natural type IIb diamond (111)

Y. Takakuwa, T. Yamada, H. Yamaguchi, 2008 .

Development of an Amorphous Selenium-Based Photodetector Driven by a Diamond Cold Cathode

Masanori Onishi, Yu Suzuki, Yusuke Mori, 2013, Sensors.

Quantum device designing (QDD) for future semiconductor engineering.

D. Chua, T. Yamada, K. Okano, 2022, The Review of scientific instruments.