S. K. Lai

Interface trap generation in silicon dioxide when electrons are captured by trapped holes

S. Lai, S. K. Lai, 1983 .

Reduction of electron trapping in silicon dioxide by high‐temperature nitrogen anneal

Donald R. Young, S. Lai, F. J. Feigl, 1981 .

The effects of water on oxide and interface trapped charge generation in thermal SiO2 films

Donald R. Young, D. Dimaria, S. Lai, 1981 .

Two‐carrier nature of interface‐state generation in hole trapping and radiation damage

S. Lai, S. K. Lai, 1981 .