Lu Xie

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.

Guilei Wang, Junfeng Li, Huilong Zhu, 2021, Nano letters.

Selective Digital Etching of Silicon-Germanium using Nitric and Hydrofluoric Acids.

A. Du, Guilei Wang, Huilong Zhu, 2020, ACS applied materials & interfaces.

A Study of Selectively Digital Etching Silicon-Germanium with Nitric and Hydrofluoric Acids

Technology of China, A. Du, Guilei Wang, 2020, 2003.03529.

The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids

Guilei Wang, Huilong Zhu, H. Radamson, 2021, Nanomaterials.

Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

A. Du, Guilei Wang, Huilong Zhu, 2021, Nanomaterials.

Ferroelectric Vertical Gate-All-Around Field-Effect-Transistors With High Speed, High Density, and Large Memory Window

Junfeng Li, Huilong Zhu, J. Xiang, 2022, IEEE Electron Device Letters.