Yangyang Li

发表

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.

Guilei Wang, Junfeng Li, Huilong Zhu, 2021, Nano letters.

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Jianfeng Gao, A. Du, Guilei Wang, 2020, Materials.

Selective Digital Etching of Silicon-Germanium using Nitric and Hydrofluoric Acids.

A. Du, Guilei Wang, Huilong Zhu, 2020, ACS applied materials & interfaces.

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Luyue Xie, A. Du, Guilei Wang, 2020, Nanomaterials.

A Study of Selectively Digital Etching Silicon-Germanium with Nitric and Hydrofluoric Acids

Technology of China, A. Du, Guilei Wang, 2020, 2003.03529.

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

Xiaojing Li, Jiajun Luo, Bo Li, 2019, IEEE Access.

Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits

Qiang Huo, Huilong Zhu, Zhenhua Wu, 2021, Microelectron. J..

Investigation of ferroelectric field-effect transistors using a replacement metal gate process

Huilong Zhu, Junjie Li, Gaobo Xu, 2020 .

Investigation of Negative DIBL Effect and Miller Effect for Negative Capacitance Nanowire Field-Effect-Transistors

Huilong Zhu, Zhenhua Wu, Yongkui Zhang, 2020, IEEE Journal of the Electron Devices Society.

The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids

Guilei Wang, Huilong Zhu, H. Radamson, 2021, Nanomaterials.

Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice

A. Du, Guilei Wang, Huilong Zhu, 2021, Nanomaterials.

Ferroelectric Vertical Gate-All-Around Field-Effect-Transistors With High Speed, High Density, and Large Memory Window

Junfeng Li, Huilong Zhu, J. Xiang, 2022, IEEE Electron Device Letters.