J. Sasserath

发表

Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures

Miko Elwenspoek, Henri V. Jansen, Johannes G.E. Gardeniers, 2002 .

Low Damage Magnetron Reactive Ion Etching of GaAs

R. Lareau, M. Meyyappan, M. Cole, 1991 .

Selective dry etching of InGaP over GaAs in inductively coupled plasmas

C. R. Abernathy, S. Pearton, J. Lee, 2000 .

Magnetically enhanced etching of sub‐0.5 μm polysilicon gates

E. Ghanbari, J. Sasserath, S. Bui, 1992 .

Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs

F. Ren, S. Pearton, J. Lee, 2001 .

Effects of N2 or Ar plasma exposure on GaAs/AlGaAs heterojunction bipolar transistors

C. R. Abernathy, F. Ren, J. Lee, 2001 .

Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas

Stephen J. Pearton, D. D. Johnson, Mike Devre, 2000 .

Low Temperature Silicon Nitride and Silicon Dioxide Film Processing by Inductively Coupled Plasma Chemical Vapor Deposition

Stephen J. Pearton, D. D. Johnson, J. W. Lee, 2000 .

Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors

S. Pearton, J. Lee, M. Jeon, 2002 .

Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs

F. Ren, S. Pearton, C. S. Wu, 2001 .

New contact process using soft etch for stable ohmic characteristics and its application to 0.1 micron CMOS devices

Y. Sugano, H. Sumi, J. Sasserath, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

High selectivity Inductively Coupled Plasma etching of GaAs over InGaP

L. C. Meyer, F. Ren, S. Pearton, 2000 .

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

F. Ren, S. Pearton, J. Lee, 1999 .