Jie Hu

Materials and processing issues in vertical GaN power electronics

Daniel Piedra, Nadim Chowdhury, Tomas Palacios, 2017 .

Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

Dirk Wellekens, Stefaan Decoutere, Brice De Jaeger, 2013, IEEE Electron Device Letters.

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2016, IEEE Transactions on Electron Devices.

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Stefaan Decoutere, Benoit Bakeroot, Steve Stoffels, 2014 .

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Daniel Piedra, Xiang Gao, Tomás Palacios, 2017, IEEE Electron Device Letters.

Trench formation and corner rounding in vertical GaN power devices

Daniel Piedra, Xiang Gao, Tomas Palacios, 2017 .

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

Guido Groeseneken, Stefaan Decoutere, Brice De Jaeger, 2014 .

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Guido Groeseneken, Stefaan Decoutere, Benoit Bakeroot, 2015 .

Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests

Guido Groeseneken, Ben Kaczer, Denis Marcon, 2017, IEEE Electron Device Letters.