J. A. Chroboczek

发表

PROGRAMABLE SYSTEM FOR LOW FREQUENCY NOISE MEASUREMENTS IN MICROELECTRONICS DEVICES CONTACTED BY POINT PROBES

Gerard Ghibaudo, A. Szewczyk, L. Spiralski, 2003 .

A novel method for base and emitter resistance extraction in bipolar junction transistors from static and low frequency noise measurements

Gerard Ghibaudo, J. A. Chroboczek, P. Llinares, 1998, ICMTS 1998. Proceedings of 1998 International Conference on Microelectronic Test Structures (Cat. No.98CH36157).

On the origin of the LF noise in Si/Ge MOSFETs

Gerard Ghibaudo, J. A. Chroboczek, 2002 .

A Selection of SOI Puzzles and Tentative Answers

Claire Fenouillet-Beranger, Sorin Cristoloveanu, Hiroshi Iwai, 2011 .

Determination of Base and Emitter Resistances in Bipolar Junction Transistors from Low Frequency Noise and Static Measurements

Gerard Ghibaudo, J. A. Chroboczek, Pierre Llinares, 1999 .

Low frequency noise in thin gate oxide MOSFETs

Thomas Skotnicki, J. A. Chroboczek, R. Kolarova, 2001, Microelectron. Reliab..

A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

Alain Chantre, Daniel Gloria, M. Laurens, 1999 .

Retarding effect of surface base compensation on degradation of noise characteristics of BiCMOS BJTs

Gerard Ghibaudo, L. Vendrame, J. A. Chroboczek, 1997 .

Origin of large‐amplitude random telegraph signal in silicon bipolar junction transistors after hot carrier degradation

Dionyz Pogany, Gerard Ghibaudo, Alain Chantre, 1996 .

Low frequency (1/f ) noise model for the base current in polysilicon emitter bipolar junction transistors

Gerard Ghibaudo, Alain Chantre, J. A. Chroboczek, 1996 .

Random Telegraph Signal in the Quasi-Breakdown Current of MOS Capacitors

G. Ghibaudo, J. A. Chroboczek, O. Briere, 1996, ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference.

Study of RTS noise in degraded submicron polysilicon-emitter bipolar transistors

J. A. Chroboczek, D. Pogany, 1995 .

Automatic, wafer-level, low frequency noise measurements for the interface slow trap density evaluation

J. A. Chroboczek, J. Chroboczek, 2003, International Conference on Microelectronic Test Structures, 2003..

Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

Gerard Ghibaudo, Kazuhito Tsukagoshi, J. A. Chroboczek, 2010 .

Has SiGe lowered the noise in transistors

G. Ghibaudo, J. A. Chroboczek, G. Ghibaudo, 2002 .

Metal gate and high-k integration for advanced CMOS devices

Thomas Skotnicki, Sorin Cristoloveanu, Simon Deleonibus, 2003, 2003 8th International Symposium Plasma- and Process-Induced Damage..

ON NOISE SOURCES IN HOT ELECTRON-DEGRADED BIPOLAR JUNCTION TRANSISTORS

Gerard Ghibaudo, J. A. Chroboczek, P. Llinares, 1997 .

DIMENSION SCALING OF 1/F NOISE IN THE BASE CURRENT OF QUASISELF-ALIGNED POLYSILICON EMITTER BIPOLAR JUNCTION TRANSISTORS

D. Celi, Gerard Ghibaudo, J. A. Chroboczek, 1997 .

Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics

Dionyz Pogany, Gerard Ghibaudo, J. A. Chroboczek, 2001 .