Guanxi Piao

Recess gate AlGaN/GaN HEMTs using overlap gate metal structure

Yoshiki Yano, M. Shimizu, T. Ide, 2010 .

High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 Gate Insulator

Hiromichi Ohashi, Hajime Okumura, Yoshiki Yano, 2006 .