I.-H. Tan

Wafer bonding of 50‐mm diameter GaP to AlGaInP‐GaP light‐emitting diode wafers

F. A. Kish, G. E. Hofler, Frank M. Steranka, 1996 .

High-brightness AlGaInP light emitting diodes

F. A. Kish, G. E. Hofler, I. Tan, 1997, Proc. IEEE.

Transferred substrate Schottky-collector heterojunction bipolar transistors: first results and scaling laws for high f/sub max/

M. Reddy, R. Pullela, J. Guthrie, 1995, IEEE Electron Device Letters.