James S Speck

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications.

Shuji Nakamura, Tien Khee Ng, Chao Shen, 2018, Optics express.

2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system.

Shuji Nakamura, Tien Khee Ng, Chao Shen, 2015, Optics express.

Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact.

Shuji Nakamura, Changmin Lee, S. Denbaars, 2016, Optics express.

Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.

Shuji Nakamura, Qimin Yan, Daniel Feezell, 2013, Optics express.

Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates.

Shuji Nakamura, Philippe De Mierry, Hongjian Li, 2017, ACS applied materials & interfaces.

Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates.

Shuji Nakamura, S. Denbaars, S. Nakamura, 2016, Optics express.

High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications.

Shuji Nakamura, Tien Khee Ng, Chao Shen, 2016, Optics letters.

Prospects for 100% wall-plug efficient III-nitride LEDs.

Claude Weisbuch, C. Weisbuch, J. Speck, 2018, Optics express.