Paul Hashimoto

发表

AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy

P. Janke, Jeong-Sun Moon, Chanh Nguyen, 2001 .

GaN/AlGaN high electron mobility transistors with f τ of 110 GHz

P. Janke, N. X. Nguyen, Chanh Nguyen, 2000 .

GaN HFET digital circuit technology

Miroslav Micovic, Adele Schmitz, David Chow, 2004 .

Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm $g_{m}$ and 112-GHz $f_{T}$

Adele E. Schmitz, Keisuke Shinohara, Andrea Corrion, 2010 .

GaN MMICs for RF power applications in the 50 GHz to 110 GHz frequency range

Adele E. Schmitz, David H. Chow, A. Kurdoghlian, 2008 .

Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique

Karim S. Boutros, Miroslav Micovic, D. Wong, 2010 .

GaN HFET digital circuit technology for harsh environments

D. McLaughlin, Adele E. Schmitz, David H. Chow, 2003 .

Reliability of T‐gate AlGaN/GaN HEMTs

Miroslav Micovic, R. Bowen, D. Wong, 2011 .

GaN/AlGaN HEMTs operating at 20 GHz with continuous-wave power density >6 W/mm

P. Janke, Jeong-Sun Moon, Chanh Nguyen, 2001 .