C. R. Elsass

发表

HIGH MOBILITY TWO-DIMENSIONAL ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1999 .

Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling

Christiane Poblenz, James S. Speck, Edward T. Yu, 2002 .

POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

James S. Speck, Umesh K. Mishra, R. Vetury, 1999 .

Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure

Christiane Poblenz, James S. Speck, William C. Mitchel, 2000 .

Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers

James S. Speck, Umesh K. Mishra, Sarah L. Keller, 2000 .

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2000 .

Dislocation mediated surface morphology of GaN

James S. Speck, S. P. DenBaars, S. Denbaars, 1999 .

Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope

Christiane Poblenz, James S. Speck, Edward T. Yu, 2002 .

STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN/GAN MULTIPLE QUANTUM WELLS

James S. Speck, Xinru Wu, M. P. Mack, 1998 .