Y. Xu

Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes

Gary H. Bernstein, Patrick Fay, Joel N. Schulman, 2001 .

A novel nickel SALICIDE process technology for CMOS devices with sub-40 nm physical gate length

J. Zhao, T. Grider, D. Mercer, 2002, Digest. International Electron Devices Meeting,.

Microwave performance and modeling of InAs/AlSb/GaSb resonant interband tunneling diodes

Patrick Fay, Joel N. Schulman, Jiang Lu, 2002 .

A flip-flop based on monolithic integration of InAs/AlSb/GaSb RITDs and InAlAs/InGaAs/InP HEMTs

P. Mazumder, P. Fay, J.N. Schulman, 2001, Device Research Conference. Conference Digest (Cat. No.01TH8561).