Jianhui Zhang

Implantation-Free 4H-SiC Bipolar Junction Transistors With Double Base Epilayers

P. Alexandrov, J.H. Zhao, Jianhui Zhang, 2008, IEEE Electron Device Letters.

4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile

Charles R. Eddy, D. Kurt Gaskill, Leonid Fursin, 2009 .

Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

P. Alexandrov, L. Fursin, J.H. Zhao, 2008, IEEE Transactions on Electron Devices.

Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor

Jian H. Zhao, P. Alexandrov, Jianhui Zhang, 2004 .