I. Yanchev

发表

Growth and characterization of SnSe2

A. Anagnostopoulos, A. N. Anagnostopoulos, K. Kambas, 1996, Journal of Materials Science.

Impurity conductivity in low compensated semiconductors

B. Shklovskii, A. Efros, I. Yanchev, 1972 .

Kinetic theory and irreversible thermodynamics

I. Yanchev, 1994 .

Electron mobility in heavily doped and compensated gallium arsenide due to scattering by potential fluctuations

I. Yanchev, S. Evtimova, 1985 .

Electron mobility in heavily doped gallium arsenide due to scattering by potential fluctuations

B. Arnaudov, I. Yanchev, S. Evtimova, 1979 .

AC conductivity of doped Bi12SiO20 crystals

M. Gospodinov, D. Petrova, M. Veleva, 2000 .

Crystal growth and characterization of SnS2

A. Anagnostopoulos, A. N. Anagnostopoulos, V. Stoyanova, 1996 .

Growth of single crystals of Hg(BrxI1−x)2 and their detection capability

A. Anagnostopoulos, K. Paraskevopoulos, E. Polychroniadis, 2005 .

On the transport kinetics of silicon carbide in the silicon-scandium-carbon system

R. Yakimova, I. Yanchev, 1981 .

Sublinear impurity solubility in indium phosphide and gallium arsenide epitaxial layers

B. Arnaudov, I. Yanchev, S. Evtimova, 1995 .

Electron mobility in heavily doped indium phosphide due to scattering by potential fluctuations

I. Yanchev, S. Evtimova, 1987 .

On the disorder scattering in GaAs1-xPx solid solutions

I. Yanchev, A. Popov, 1977 .

Growth and characterization of TlInTe2

M. Gospodinov, V. Stoyanova, I. Yanchev, 1997 .

Growth and characterization of TlGaTe2

M. Gospodinov, A. N. Anagnostopoulos, I. Yanchev, 1995 .

Analysis of microhardness data in TlxIn1−xSe

A. N. Anagnostopoulos, E. Trifonova, I. Yanchev, 1995, Journal of Materials Science.

On the maximum in hall coefficient temperature dependence in medium-doped n-GaAs

V. Donchev, I. Yanchev, K. Germanova, 1990 .

Nonexponential deep level transient spectroscopy analysis of moderately doped bulk n-GaAs

K. Kirov, I. Yanchev, K. Germanova, 1992 .

Productivity and Quality of Bulgarian Lavender Variaties

I. Yanchev, 2017 .

Path-integral calculation of the density of states in heavily doped, strongly compensated semiconductors in a magnetic field

I. Yanchev, Z. Koinov, 1981 .

Density of states in heavily doped strongly compensated semiconductors with correlated impurity distribution

I. Yanchev, Z. Koinov, A. Petkova, 1981 .

Peculiarities of silicon carbide crystal growth under the diffusion mechanism of vapour transfer

S. Lilov, I. Yanchev, 1992 .

Study of the concentration distribution of SiC vapour in the crystal growth zone

S. Lilov, I. Yanchev, 1993 .

Impurity potential distribution and density of states in a heavily doped, slightly compensated semiconductor

I. Yanchev, A. Anguelov, 1995 .

Hopping conductivity in heavily doped strongly compensated GaAs

B. Arnaudov, I. Yanchev, D. S. Domanevskii, 1979 .

Effects induced by fluctuating alloy potential on the impurity levels in semiconductor solid solutions

I. Yanchev, G. Bleris, 1988 .

Density-of-states tail in heavily doped closely compensated semiconductors

I. Yanchev, Zlatko Koinov, 1978 .