D. Hodul

发表

Raman spectra of IVB and VIB transition metal disulfides using laser energies near the absorption edges

A. Stacy, D. Hodul, 1985 .

A study of secondary ion triple bond analogues

W. C. Harris, G. Morrison, D. Hodul, 1980 .

A Study of Secondary Molecular Ion Formation in Rare Earths and Rare Earth Oxides.

W. C. Harris, G. Morrison, D. Hodul, 1980 .

Simulation of uniformity and lifetime effects in collimated sputtering

M. Brett, T. Smy, S. Dew, 1996 .

Plasma cleaned Si analyzed in situ by x-ray photoelectron spectroscopy, secondary ion mass spectrometry, and actinometry

A. Ellingboe, S. Salimian, M. Delfino, 1992 .

Wavelength-specific pyrometry as a temperature measurement tool

M. Delfino, D. Hodul, 1992 .

Study of gate oxide damage in an electron cyclotron resonance argon plasma

S. Salimian, D. Hodul, S. Felch, 1992 .

Removal of fluorocarbon residue on Si with an electron cyclotron resonance excited Ar plasma

S. Salimian, M. Delfino, D. Hodul, 1991 .

Characterization of tungsten silicide films from a cold-pressed, vacuum-sintered composite target

R. Chow, D. Hodul, C. Sridhar, 1986 .

X‐ray photoemission spectra of reactively sputtered TiN

J. Fair, M. Delfino, D. Hodul, 1992 .

Diamond MESFET using ultrashallow RTP boron doping

C. B. Cooper, M. Riaziat, M. Delfino, 1991, IEEE Electron Device Letters.

A new approach to the generation of metal-bearing, medium-pore, shape-selective zeolites for fischer-tropsch catalysis: spectroscopic studies of zeolites

L. Iton, D. Hodul, R. Beal, 1983 .

Partial substitution of 18 O in YBa 2 Cu 3 O 7 : Investigations of inhomogeneities and their effect on T c

A. Stacy, J. N. Michaels, S. W. Keller, 1989 .

The effects of nonstoichiometry and electron concentration on the properties of LixHfTe2−y

A. Stacy, D. Hodul, 1985 .

Anomalies in the properties of Hf(S2−xTex)1−y and Hf(Se2−xTex)1−y near the metal-insulator transition

A. Stacy, D. Hodul, 1984 .

Synchrotron X-ray topographic studies of the changes in defect microstructure induced by rapid thermal processing of single-crystal silicon wafers

M. Dudley, F. F. Wang, D. Hodul, 1990 .

Synchrotron X-Ray Topographic Study of the Behavior of Defects in High Carbon-Content Si Wafers during RTP

M. Dudley, D. Hodul, D. Gordon-Smith, 1991 .

Synchrotron Topographic Studies of the Influence of Rapid Thermal Processing on Defect Structures in Single Crystal Silicon.

M. Dudley, Jun Wu, F. F. Wang, 1990 .

The structure and electronic properties of the solid solutions (ZrxTi1−x)1+yS2

A. Stacy, D. Hodul, 1986 .

Ti / TiN Reactive Sputtering: Plasma Emission, X‐Ray Diffraction and Modeling

J. Fair, D. Hodul, W. Tsai, 1992 .

Photoacoustic and Absorption Spectra of UF4

D. Hodul, 1983 .

Studies of thin oxides grown by rapid thermal processing

S. Mehta, D. Hodul, C. Russo, 1987 .

Raman scattering study of rapid thermal annealing of As+‐implanted Si

D. Kirillov, D. T. Hodul, R. A. Powell, 1985 .

Photoacoustic spectra of MoS2.

K. D. Carlson, D. Hodul, 1983, Applied optics.