Yung-Chen Cheng

发表

Fast Real-Space Imaging of the Exciton Complexes in WSe2 and WS2 Monolayers Using Multiphoton Microscopy

Kuang-I Lin, Jiaqiang Yan, C. Chen, 2020 .

Amplified Spontaneous Emission From ZnO in n-ZnO/p-GaN Heterojunction Light-Emitting Diodes With an External-Feedback Reflector

M. Shiojiri, Miin-Jang Chen, J. Yang, 2010, IEEE Photonics Technology Letters.

Formation of quasi-regular quantum dots with post-growth thermal annealing and their optical characteristics in InGaN/GaN quantum wells

Chih-Wen Liu, S. Feng, K. Ma, 2002, CLEO 2002.

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

M. Lu, C. Kuo, Hsiang-Chen Wang, 2016, 1612.04455.

ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 °C with three-pulsed precursors in every growth cycle

Miin-Jang Chen, Yung-Chen Cheng, Kai-Yun Yuan, 2016 .

Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition

Miin-Jang Chen, Hsiang-Chen Wang, S. Feng, 2020, Nanoscale Research Letters.

Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 °C with three-pulsed precursors per growth cycle

Miin-Jang Chen, Yung-Chen Cheng, Kai-Yun Yuan, 2017 .

Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells

J. Y. Chen, J. Yang, A. Rosenauer, 2005 .

Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures

J. Chyi, S. Feng, Chih-Chung Yang, 2003 .

Nanostructure study of the coalescence growth of GaN columns with molecular beam epitaxy

C. Kuo, Hsiang-Chen Wang, Che-Hao Liao, 2013 .

Crack-free GaN deposition on Si substrate with temperature-graded AlN buffer growth and the emission characteristics of overgrown InGaN/GaN quantum wells

Weifeng Su, Y. Kiang, Kuan-Yu Chen, 2014 .

Quantum dot formation in InGaN/GaN quantum well structures with silicon doping and the mechanisms for radiative efficiency improvement

S. Feng, Chih-Chung Yang, Yung-Chen Cheng, 2003 .

The action of silicon doping in the first two to five barriers of eight periods In0.2Ga0.8N/GaN multiple quantum wells of blue LEDs

Kuang-I Lin, Hsiang-Chen Wang, Zu-Po Yang, 2016 .

Ultracompact polarization rotator in an asymmetric single dielectric loaded rib waveguide.

Chih-Wei Hsu, Yung-Chen Cheng, Hung-Yuan Lin, 2016, Applied optics.

Depth dependence of optical property beyond the critical thickness of an InGaN film

Hsiang-Chen Wang, Chih-Chung Yang, Chih-Wei Hsu, 2006 .

Highly sensitive miniaturized refractive index sensor based on polarization rotation in optical waveguide

Chih-Wei Hsu, Yung-Chen Cheng, Jhen-yu Chen, 2016, 2016 International Conference on Applied System Innovation (ICASI).

Wide range variation of resonance wavelength of GaZnO plasmonic metamaterials grown by molecular beam epitaxy with slight modification of Zn effusion cell temperatures

Hsiang-Chen Wang, S. Shi, Yu-Feng Yao, 2021, Journal of Alloys and Compounds.

Surface Characterization and Tribological Behavior of Graphene-Reinforced Cellulose Composites Prepared by Large-Area Spray Coating on Flexible Substrate

S. Shi, Yung-Chen Cheng, Chih-Chia Wang, 2020 .

A microstructure study of post-growth thermally annealed InGaN/GaN quantum well structures of various well widths

S. Feng, Chih-Chung Yang, J. Tsang, 2003 .

Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy

Kuang-I Lin, S. Gwo, Yung-Chen Cheng, 2015 .

Surface plasmon resonance behaviors of a highly Ga-doped ZnO nano-grating structure

Y. Kiang, Yu-Feng Yao, C. Tu, 2019, Optical Materials Express.

Improvements of InGaN∕GaN quantum-well interfaces and radiative efficiency with InN interfacial layers

J. Yang, Z. Feng, A. Rosenauer, 2004 .

Effects of interfacial layers in InGaN∕GaN quantum-well structures on their optical and nanostructural properties

L. C. Chen, Chih-Chiang Yang, S. Shi, 2005 .

Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

M. Lu, C. Kuo, Hsiang-Chen Wang, 2016, 1612.04455.

Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells

Chih-Wen Liu, S. Feng, M.-H. Mao, 2002 .

Two-Component Photoluminescence Decay in InGaN/GaN Multiple Quantum Well Structures

J. Chyi, Chih-Wen Liu, S. Feng, 2001 .

Enhanced photoluminescence from condensed electron-hole pairs in trenched Si

Miin-Jang Chen, Yung-Chen Cheng, Chi Sun, 2010 .

Low-Threshold Stimulated Emission in ZnO Thin Films Grown by Atomic Layer Deposition

Miin-Jang Chen, F. Tsai, Yung-Chen Cheng, 2008, IEEE Journal of Selected Topics in Quantum Electronics.

Film Thickness Dependence of Surface Plasmon Resonance Behavior at a Grating Structure of Highly Ga‐Doped ZnO

Y. Kiang, Yung-Chen Cheng, Yang Kuo, 2020, physica status solidi (a).

Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures

J. Chyi, S. Feng, K. Ma, 2002 .

Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

Chih-Chung Yang, Kung-Jeng Ma, Jen-Inn Chyi, 2000 .

Partially polycrystalline GaN1−xAsx alloys grown on GaAs in the middle composition range achieving a smaller band gap

Kuang-I Lin, Hong-Ming Wu, Hao-Hsiung Lin, 2017 .

Nanostructures and Carrier Localization Behaviors of Green-luminescence InGaN/GaN Quantum-well Structures of Various Silicon-doping Conditions

Chih-Chung Yang, Yung-Chen Cheng, Andreas Rosenauer, 2004 .

Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS2 films

Kuang-I Lin, Yung-Chen Cheng, Y. Chen, 2016 .

Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition

Yung-Chen Cheng, Yung-Chen Cheng, 2011 .

Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures

Chih-Chung Yang, Kung-Jeng Ma, Jen-Inn Chyi, 2002 .

Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31

Chih-Chung Yang, Kung-Jen Ma, Shih-Wei Feng, 2003 .

Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing

Miin-Jang Chen, J. Shyue, Ying-Shen Kuo, 2011 .

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs

Kuang-I Lin, M. Lu, Hsiang-Chen Wang, 2017, Nanoscale Research Letters.

Growing high-quality ternary CdMnTe epilayers by molecular beam epitaxy on Si substrates and its mechanism

Chih-Hung Wu, Chu-Shou Yang, Jyh-Shyang Wang, 2015 .

Excitation power dynamics of photoluminescence in InGaN∕GaN quantum wells with enhanced carrier localization

Albertas Žukauskas, Chih-Chung Yang, Gintautas Tamulaitis, 2005 .

Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells

S. Feng, Chih-Chung Yang, J. Tsang, 2003 .

Exciton hopping in In x Ga 1 − x N multiple quantum wells

A. Zukauskas, K. Kazlauskas, G. Tamulaitis, 2005 .

Carrier relaxation in InGaN/GaN quantum wells with nanometer-scale cluster structures

Shih-Chun Lin, Hsiang-Chen Wang, Chih-Chung Yang, 2004 .

Exciton hopping in InxGa1-xN multiple quantum wells

A. Žukauskas, K. Kazlauskas, G. Tamulaitis, 2005 .

Carrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nanocluster structures

Hsiang-Chen Wang, Cheng-Yen Chen, Chih-Chung Yang, 2007 .

Photoluminescence temperature behavior and Monte Carlo simulation of exciton hopping in InGaN multiple quantum wells

A. Zukauskas, Hsiang-Chen Wang, K. Kazlauskas, 2005 .