TaekRyong Chung

1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature

Tadatomo Suga, Hideki Takagi, Naoe Hosoda, 1998 .

Surface activated bonding of silicon wafers at room temperature

Ryutaro Maeda, Tadatomo Suga, Ken'ichi Kikuchi, 1996 .