Yao Guo

发表

Study on the resistance distribution at the contact between molybdenum disulfide and metals.

Yao Guo, Qing Chen, Song Gao, 2014, ACS nano.

The intrinsic origin of hysteresis in MoS2 field effect transistors.

Yao Guo, Bo Liu, Xianlong Wei, 2016, Nanoscale.

Unravelling orientation distribution and merging behavior of monolayer MoS2 domains on sapphire.

Qiang Sun, Zhongfan Liu, D. Ma, 2015, Nano letters.

Negative photoconductivity of InAs nanowires.

Xing Li, Yao Guo, Xiao Zheng, 2016, Physical chemistry chemical physics : PCCP.

Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

Bo Liu, Yao Guo, Qing Chen, 2015 .

Electrical transport properties of individual WS2 nanotubes and their dependence on water and oxygen absorption

Zhiyong Zhang, Sheng Wang, R. Tenne, 2012 .

Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm

Yao Guo, Qing Chen, Jianhua Zhao, 2015, Nanotechnology.

Remarkable influence of slack on the vibration of a single-walled carbon nanotube resonator.

Chenguang Qiu, Gongtao Wu, Xianlong Wei, 2016, Nanoscale.

Edge‐States‐Induced Disruption to the Energy Band Alignment at Thickness‐Modulated Molybdenum Sulfide Junctions

Jianbo Yin, Zhongfan Liu, H. Peng, 2016 .

Directly correlating the strain-induced electronic property change to the chirality of individual single-walled and few-walled carbon nanotubes.

X. Bai, Xianlong Wei, Jiake Wei, 2015, Nanoscale.

Unravelling orientation distribution and merging behavior of monolayer MoS2 domains on sapphire.

Qiang Sun, Zhongfan Liu, D. Ma, 2015, Nano letters.

Contact properties of field-effect transistors based on indium arsenide nanowires thinner than 16 nm

Jianhua Zhao, Qing Chen, M. Fu, 2015, Nanotechnology.