P. Watson

Ultra-efficient X-band and linear-efficient Ka-band power amplifiers using indium phosphide double heterojunction bipolar transistors

H.C. Yen, D. Sawdai, W. Okamura, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Multi-Octave and Frequency-Agile LNAs Covering S-C Band Using 0.25 µm GaN Technology

W. Khalil, W. Khalil, V. Patel, 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Wideband, High-Efficiency GaN Power Amplifiers Utilizing a Non-Uniform Distributed Topology

L. Kehias, P. Watson, L. Kehias, 2007, 2007 IEEE/MTT-S International Microwave Symposium.

A wide-bandwidth W-band LNA in InP/Si BiCMOS technology

Y. Royter, P. Watson, A. Mattamana, 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).

Broadband class-E power amplifier for space radar application

D. Sawdai, W. Okamura, E. Kaneshiro, 2001, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191).