J. M. Zhou

发表

Resonant photorefractive AlGaAs/GaAs multiple quantum wells grown by molecular beam epitaxy at low temperature

Yunjin Yu, Panming Fu, Zhi-guo Zhang, 1996 .

MBE growth and Raman studies of cubic and hexagonal GaN films on (001)-oriented GaAs substrates

Hongfei Liu, Yanjun Han, Yanjun Han, 2000 .

Influence of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN/GaN multiple quantum wells

Xiliang Zheng, Qizhang Huang, J. Zhou, 2004 .

Improvement of Ge self-organized quantum dots by use of Sb surfactant

Y. Zhang, Qizhang Huang, T. Sheng, 1998 .

Dependence of leakage current on dislocations in GaN-based light-emitting diodes

Haiqiang Jia, Qizhang Huang, H. Jia, 2004 .

Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction

Qizhang Huang, J. Zhou, Qizhang Huang, 2003 .

Growth and characterization of AlGaN∕GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy

Chang Liu, Fei Mei, J. M. Zhou, 2008 .

Anisotropy of a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition

Qizhang Huang, J. Zhou, X. H. Zheng, 2004 .