A. F. Tsatsul’nikov

发表

InGaN/GaN short-period superlattices: synthesis, properties, applications

Martin Hÿtch, N. V. Kryzhanovskaya, A. E. Chernyakov, 2011 .

3.9 W CW power from sub-monolayer quantum dot diode laser

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 1999 .

Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C

D. Bimberg, N. N. Ledentsov, Yu. M. Shernyakov, 1997 .

High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates

D. A. Livshits, A. R. Kovsh, D. Bimberg, 2002 .

The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

D. Bimberg, N. N. Ledentsov, D. S. Sizov, 2002 .

A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

N. V. Kryzhanovskaya, A. L. Zakgeim, A. E. Nikolaev, 2010 .

Quantum dot lasers: breakthrough in optoelectronics

Nikolai N. Ledentsov, Mikhail V. Maximov, Dieter Bimberg, 2000 .

Fast AlGaN growth in a whole composition range in planetary reactor

S. I. Troshkov, A. E. Nikolaev, W. V. Lundin, 2013 .

Effect of stimulated phase separation on properties of blue, green and monolithic white LEDs

Martin Hÿtch, A. L. Zakgeim, A. E. Nikolaev, 2012 .

1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2001 .

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Martin Hÿtch, N. V. Kryzhanovskaya, A. E. Cherniakov, 2011 .