Y. Ee

发表

Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses

J. Gilchrist, N. Tansu, Hongping Zhao, 2009, IEEE Journal of Selected Topics in Quantum Electronics.

Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed ${\hbox{TiO}}_{2}$ Microsphere Arrays

Yik-Khoon Ee, Nelson Tansu, Pisist Kumnorkaew, 2013, Journal of Display Technology.

Fabrication of self-assembled silica / polystyrene microlens arrays for light extraction enhancement in nitride light-emitting diodes

N. Tansu, Renbo Song, Y. Ee, 2011, CLEO: 2011 - Laser Science to Photonic Applications.

Novel growth and device concepts for high-efficiency InGaN quantum wells light-emitting diodes

N. Tansu, Hongping Zhao, H. Tong, 2010, CLEO/QELS: 2010 Laser Science to Photonic Applications.

Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire

Yik-Khoon Ee, Nelson Tansu, Xiaohang Li, 2010 .

Enhancement of Light Extraction Efficiency of InGaN Quantum Wells LEDs Using SiO2 Microspheres

Yik-Khoon Ee, J. Gilchrist, N. Tansu, 2007, 2007 Conference on Lasers and Electro-Optics (CLEO).

Investigation of the deposition of microsphere monolayers for fabrication of microlens arrays.

Yik-Khoon Ee, Nelson Tansu, Pisist Kumnorkaew, 2008, Langmuir : the ACS journal of surfaces and colloids.

Dislocation structure of GaN films grown on planar and nano-patterned sapphire

N. Tansu, R. Vinci, H. M. Chan, 2011 .

Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination

B. Tay, Q. Zhang, L. Pan, 2004 .

Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode

Yik-Khoon Ee, N. Tansu, R. Vinci, 2009, IEEE Journal of Selected Topics in Quantum Electronics.

Growth evolution and time-resolved photoluminescence studies of III-nitride light-emitting diodes grown by abbreviated growth mode on patterned AGOG substrate

N. Tansu, R. Vinci, H. M. Chan, 2010, CLEO/QELS: 2010 Laser Science to Photonic Applications.

Improved Photoluminescence of InGaN Quantum Wells Grown on Nano-Patterned AGOG Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

N. Tansu, V. Dierolf, R. Vinci, 2007, LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings.

Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes

Ronald A. Arif, Yik-Khoon Ee, Nelson Tansu, 2007 .

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

Yik-Khoon Ee, Hongping Zhao, N. Tansu, 2008, IEEE Journal of Quantum Electronics.

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

Yik-Khoon Ee, Hongping Zhao, N. Tansu, 2009, IEEE Journal of Quantum Electronics.

Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy

Ronald A. Arif, Yik-Khoon Ee, Nelson Tansu, 2008 .

III-Nitride Photonics

Yik-Khoon Ee, Nelson Tansu, Hua Tong, 2010, IEEE Photonics Journal.

Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm

Ronald A. Arif, Yik-Khoon Ee, Nelson Tansu, 2008, 2007 International Conference on Numerical Simulation of Optoelectronic Devices.

Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios

Yik-Khoon Ee, Nelson Tansu, Pisist Kumnorkaew, 2011, IEEE Photonics Journal.

Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures.

Yik-Khoon Ee, Nelson Tansu, Pisist Kumnorkaew, 2009, Optics express.

Self-consistent optical gain analysis and epitaxy of strain-compensated InGaN-AlGaN quantum wells for laser applications

N. Tansu, Hongping Zhao, Y. Ee, 2008, 2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science.

Radiative efficiency and spontaneous recombination rate of staggered InGaN quantum well LED at 420-510 nm

Ronald A. Arif, Yik-Khoon Ee, Nelson Tansu, 2008, SPIE OPTO.

Optical gain and spontaneous emission of strain-compensated InGaN-AlGaN quantum wells including carrier screening effect

Ronald A. Arif, Nelson Tansu, Hongping Zhao, 2008, SPIE OPTO.

Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420–510 nm

N. Tansu, Y. Ee, R. Arif, 2008 .

Optical Gain Analysis of Staggered InGaN Quantum Well Active Regions for Lasers Emitting at 420-500 nm

N. Tansu, Hongping Zhao, Y. Ee, 2007, Lasers and Electro-Optics Society Meeting.

Optical Gain Analysis of Strain Compensated InGaN-AlGaN Quantum Well Active Regions for Lasers Emitting at 420-500 nm

Ronald A. Arif, Yik-Khoon Ee, Nelson Tansu, 2007 .

Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: device physics and epitaxy engineering

G. S. Huang, Renbo Song, Yik-Khoon Ee, 2011, OPTO.

Enhancement of light extraction efficiency of InGaN quantum wells light-emitting diodes using TiO2 microsphere arrays

Renbo Song, Yik-Khoon Ee, Nelson Tansu, 2011, OPTO.

Novel device concepts for high-efficiency InGaN-based light-emitting diodes

G. S. Huang, Yik-Khoon Ee, Nelson Tansu, 2010, OPTO.

Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes

Yik-Khoon Ee, Nelson Tansu, Xiaohang Li, 2010, OPTO.

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

Ronald A. Arif, Yik-Khoon Ee, Nelson Tansu, 2008 .