S. Subramanya

发表

High-power AlGaInN flip-chip light-emitting diodes

Michael R. Krames, S. A. Stockman, Paul S. Martin, 2001 .

Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy

Eicke R. Weber, Piotr Perlin, Ying-Lan Chang, 1999 .

High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures

E. Weber, S. Subramanya, Y. Kim, 2001 .

Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01

E. Weber, W. Walukiewicz, P. Perlin, 2000 .

TOWARDS THE DEVELOPMENT OF DEFECT-FREE GaN SUBSTRATES: DEFECT CONTROL IN HETERO-EPITAXIALLY GROWN GaN BY NEW BUFFER LAYER DESIGN

J. Krüger, S. Subramanya, Y. Kim, 1998 .

Packaging challenges of high-power LEDs for solid state lighting

Frank Wall, Shatil Haque, Paul S. Martin, 2003 .

High Power LEDs – Technology Status and Market Applications

Michael R. Krames, Lou W. Cook, S. A. Stockman, 2002 .

Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer

E. Weber, P. Perlin, D. Mars, 1998 .

GaN thin films by growth on Ga-rich GaN buffer layers

Z. Liliental-Weber, E. Weber, S. Ruvimov, 2000 .

High-flux and high-efficiency nitride-based light-emitting devices

Jonathan J. Wierer, R. Fletcher, M. Craford, 2002, The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society.