K. Shim

发表

GaN-based light-emitting diode with textured indium tin oxide transparent layer coated with Al2O3 powder

Y. G. Hong, J. Yang, G. Yang, 2009 .

Temperature dependent Schottky barrier characteristics of Al/n-type Si Schottky barrier diode with Au–Cu phthalocyanine interlayer

V. R. Reddy, Chel-Jong Choi, Arunandan Kumar, 2020 .

The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

Chel-Jong Choi, Han-Soo Jang, K. Shim, 2018, Electronic Materials Letters.

Noise in Si Ge pMOSFETs Under Fowler-Nordheim Stress

H. Bae, B. Mheen, Y. Song, 2003 .

Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs

J. Yang, Jeon-Wook Yang, K. Shim, 2008 .

Effect of Sn Composition in Ge1−xSnx Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

K. Shim, T. Jeong, Yeon-Ho Kil, 2018 .

Temperature dependence of the photocurrent in Ge1−xSnx layers

Chel-Jong Choi, K. Shim, T. Jeong, 2016 .

Effect of phosphorus doping concentration on n-type Ge layer growth

Chel-Jong Choi, K. Shim, T. Jeong, 2014 .

Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition

Chel-Jong Choi, K. Shim, T. Jeong, 2014 .

Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD

Chel-Jong Choi, K. Shim, T. Jeong, 2014 .

Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition

Ah Hyun Park, K. Shim, T. Jeong, 2013 .

Optical characterization of tensile-strained a p-type Ge layer on a Si (100) substrate

K. Shim, T. Jeong, Hyeon Deok Yang, 2013 .

Fabrication of PIN photo-diode from Si0.2Ge0.8/Si strained MQWs

Chel-Jong Choi, K. Shim, T. Jeong, 2009 .

Improved quality and reliability of ultrathin (1.4–2.3 nm) gate oxides by radical-assisted oxidation utilizing a remote ultraviolet ozone source

N. Lee, H. Bae, B. Mheen, 2004 .

DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Si₀.₈₈Ge₀.₁₂(C) Heterostructure Channel

Kyu-Hwan Shim, Deok-Ho Cho, Tae-Hyun Han, 2006 .

Ge1−xSnx/Ge heterostructure infrared photodetector

Chel-Jong Choi, K. Shim, Yeon-Ho Kil, 2015, 2015 IEEE SENSORS.

Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy

S. G. Bishop, O. Gluschenkov, J. Myoung, 1996 .

Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Chel-Jong Choi, K. Shim, T. Jeong, 2014 .

Electroluminescence of p-Ge/i-Ge/n-Si heterojunction PIN LEDs

Chel-Jong Choi, K. Shim, T. Jeong, 2014 .

Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation

Chel-Jong Choi, V. Janardhanam, K. Shim, 2021, Electronics.

Reduced gate leakage current in AlGaN/GaN HEMT by oxygen passivation of AlGaN surface

J. Yang, K. Shim, S. Hong, 2008 .

Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode

V. R. Reddy, Chel-Jong Choi, V. Janardhanam, 2020 .

Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-Type β-Ga2O3

Chel-Jong Choi, V. Janardhanam, Sungnam Lee, 2019, Journal of Electronic Materials.

Advance View Proofs Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au / n-Type Si Schottky Barrier Diode Modi fi ed Using a PEDOT : PSS Interlayer

V. R. Reddy, Chel-Jong Choi, Jaehee Cho, 2014 .

Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer

Chel-Jong Choi, K. Kim, H. Yun, 2014 .

Temperature-dependent current-voltage characteristics and reverse leakage conduction mechanism of Pt/n-type Si0.85Ge0.15 schottky rectifiers

Chel-Jong Choi, Kwang-soon Ahn, V. Janardhanam, 2012 .

Development of transient voltage suppressor device with abrupt junctions embedded by epitaxial growth technology

Kyu-Hwan Shim, Deok-Ho Cho, Sang-Sik Choi, 2009 .

High Performance ESD/Surge Protection Capability of Bidirectional Flip Chip Transient Voltage Suppression Diodes

Chel-Jong Choi, K. Shim, Sangi-Sik Choi, 2016 .

Transmission line pulse properties for a bidirectional transient voltage suppression diode fabricated using low-temperature epitaxy

Chel-Jong Choi, H. Yun, K. Shim, 2015, Electronic Materials Letters.

Effects of Electrostatic Discharge Stress on Current-Voltage and Reverse Recovery Time of Fast Power Diode

Chel-Jong Choi, K. Shim, Sangi-Sik Choi, 2014 .

Reverse Current Conduction Mechanism of Transient Voltage Suppression Diode under Electrostatic Discharge Stress

Chel-Jong Choi, K. Shim, D. Cho, 2014 .

Transient voltage suppressor diode designed for the protection of high-brightness GaN-based LEDs from various electrostatic discharge shocks

Chel-Jong Choi, Jaehee Cho, K. Shim, 2014 .

Low-temperature growth of in situ phosphorus-doped silicon films: two-step growth utilizing amorphous silicon buffers

H. Kim, Jeongyong Lee, K. Shim, 2000 .

Raman Spectroscopy and Photocurrent of GaAsN/GaAs Multiple Quantum Wells

K. Shim, T. Jeong, Sukill Kang, 2022, Electronic Materials Letters.

Platinum Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique

Chel-Jong Choi, M. Jang, H. Hong, 2009 .

Formation and Properties of Epitaxial CoSi2 Layers on p-Si0.83Ge0.17/p-Si(001) using a Si Capping Layer by Metal-Organic Chemical Vapor Deposition

N. Lee, B. Ahn, D. Shin, 2003 .

Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer

V. R. Reddy, Chel-Jong Choi, Jaehee Cho, 2015 .

Growth and Characterization of InGaN/GaN Heterostructures Using Plasma-Assisted Molecular Beam Epitaxy

K. Cho, M. Paek, K. Shim, 1999 .

High gain GaN ultraviolet Schottky photodetector with Al-doped ZnO interlayer

Chel-Jong Choi, V. Janardhanam, K. Shim, 2021, Surfaces and Interfaces.

Optical properties of InGaN/GaN MQW microdisk arrays on GaN/Si(111) template

E. Suh, K. Shim, K. Lim, 2008 .

Broadband photodetector based on MoS2/Ge heterojunction for optoelectronic applications

V. R. Reddy, Chel-Jong Choi, Dong-Ho Kim, 2022, Vacuum.

A study on the structure/phase transformation of titanate nanotubes synthesized at various hydrothermal temperatures

E. Suh, H. Seo, Young-soon Kim, 2008 .

Low temperature selective Si epitaxy by reduced pressure chemical vapor deposition introducing periodic deposition and etching cycles with SiH 4 , H 2 and HCl

H. Kim, Jin-Yeong Kang, Jeongyong Lee, 2000 .

Investigation of interfacial reaction of Ni on epitaxial Si1-xGex (001)layers

T. Seong, Y. Ok, K. Shim, 2018 .

Structural properties of nickel silicided Si1−xGex(001) layers

T. Seong, Y. Ok, Y. Song, 2004 .

Improvement of the morphological stability of Ni-silicided Si0.8Ge0.2 layers by using a molybdenum interlayer

T. Seong, Y. Ok, Y. Song, 2004 .

Structural and electrical characteristics of epitaxial CoSi2 grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer

Y. H. Lee, D. Shin, K. Shim, 2004 .

Structural and electrical properties of MOCVD-cobalt silicide on p-Si0.83Ge0.17/Si(001)

B. Ahn, D. Shin, K. Shim, 2002 .

Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

Chel-Jong Choi, K. Shim, T. Jeong, 2014 .

Growth and characterization of Si1−xGetx QDs on Si/Si0.8Ge0.2 layer

Woong-Ki Hong, K. Shim, T. Jeong, 2012, Electronic Materials Letters.

Effect of a SiO 2 Anti-reflection Layer on the Optoelectronic Properties of Germanium Metal-semiconductor-metal Photodetectors

김종희, Kyu-Hwan Shim, Munkhsaikhan Zumuukhorol, 2017 .

DC and RF characteristics of RPCVD grown modulation doped Si0.8Ge0.2 pMOSFETs

Sang-Heung Lee, H. Bae, Y. Song, 2004 .

Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier

Songcheol Hong, Y. Song, K. Shim, 2004 .

Critical thickness of GaN thin films on sapphire (0001)

Ian K. Robinson, Chinkyo Kim, I. Robinson, 1996 .

Optical properties of Si1−xGex quantum dots grown using RPCVD

B. G. Park, K. Shim, T. Jeong, 2011 .

Effects of RF Plasma Parameters on the Growth of INGaN/GaN Heterostructures Using Plasma-Assisted Molecular Beam Epitaxy

K. Cho, M. Paek, K. Shim, 1999 .

Temperature dependent current–voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

Chel-Jong Choi, H. Yun, H. Hong, 2015 .

Improvement of dry etch-induced surface roughness of single crystalline β-Ga2O3 using post-wet chemical treatments

Chel-Jong Choi, Hyunjin Park, H. Yun, 2020 .

Two-dimensional dopant profiling in p+/n junctions using scanning electron microscope coupled with selective electrochemical etching

Chel-Jong Choi, H. Yun, Kwang-soon Ahn, 2010 .

Microstructural and phase evolutions of Pt contact to N-type In0.53Ga0.47As driven by rapid thermal annealing and its correlation with specific contact resistivity

Chel-Jong Choi, V. Janardhanam, K. Shim, 2021 .

Evolution of Surface Morphology and Strain in Low-Temperature AlN Grown by Plasma-Assisted Molecular Beam Epitaxy

I. Robinson, O. Gluschenkov, J. Myoung, 1998 .

Characterization of reduced pressure chemical vapor deposited Si0.8Ge0.2/Si multi-layers

Woong-Ki Hong, K. Shim, T. Jeong, 2013 .

Optical properties of Si0.8Ge0.2/Si multiple quantum wells

H. K. Lee, K. Shim, T. Jeong, 2011 .

Glancing-Angle Electron Beam Bombardment for Modification of GaN Epilayer Growth using Plasma-Assisted Molecular Beam Epitaxy

K. Cho, M. Paek, K. Shim, 1999 .

Stimulated emission at 300 K from photopumped GaN grown by plasma-assisted molecular beam epitaxy with an inductively coupled plasma source

O. Gluschenkov, J. Myoung, J. Eden, 1997 .

Growth and characterization of GaN on sapphire (0001) using plasma‐assisted ionized source beam epitaxy

J. Verdeyen, K. Kim, K. Shim, 1995 .

Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs

Chel-Jong Choi, K. Shim, T. Jeong, 2014 .

Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs

Chel-Jong Choi, K. Shim, T. Jeong, 2013, Journal of the Korean Physical Society.

Formation of Nickel Silicide Layer on Strained-Si0.83Ge0.17/Si(001) using a Sacrificial Si Layer and its Morphological Instability

N. Lee, D. Shin, Y. Song, 2005 .

Study of Gate Leakage Current on AlGaN/GaN MOSHEMTs with Atomic Layer Deposited Al₂O₃ Gate Oxide

Chel-Jong Choi, V. Janardhanam, K. Shim, 2019 .

Extrapolation of critical thickness of GaN thin films from lattice constant data using synchrotron X-ray

I. Robinson, J. Myoung, K. Kim, 1996 .

Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure

Chel-Jong Choi, K. Shim, T. Jeong, 2014 .

Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si-on-Insulator

Chel-Jong Choi, H. Hong, V. Janardhanam, 2013 .

Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

Woong-Ki Hong, K. Shim, T. Jeong, 2012, Electronic Materials Letters.

Temperature-Dependent Schottky Diode Behavior of Ni Schottky Contacts to Α-Ga2o3 Film Epitaxially Grown on Sapphire Substrate

Chel-Jong Choi, V. Janardhanam, H. Kim, 2023, SSRN Electronic Journal.

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si0.88Ge0.12 channel grown on bulk Si and a PD-SOI substrate

Kyu-Hwan Shim, A-Ram Choi, Deok-Ho Cho, 2008 .

Dry Etching of Germanium by Using Inductively Coupled CF$_{4}$Plasma

K. Shim, T. Jeong, H. Y. Yang, 2009 .

Selective Chemical Wet Etching of Si 0.8 Ge 0.2 /Si Multilayer

Kyu-Hwan Shim, Jong-Han Yang, Yeon-Ho Kil, 2013 .

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Kyu-Hwan Shim, Yong Tae Kim, Chel-Jong Choi, 2015 .

Self-Powered Mos2/N-Type Gan Heterojunction Photodetector with Broad Spectral Response in Ultraviolet–Visible–Near-Infrared Range

Chel-Jong Choi, V. Janardhanam, K. Shim, 2023, SSRN Electronic Journal.

Characterization of germanium dry etching using inductively coupled BCl3 plasma

K. Shim, T. Jeong, Sukill Kang, 2009 .

Correlation of Crystal Defects with Device Performance of AlGaN/GaN High-Electron-Mobility Transistors Fabricated on Silicon and Sapphire Substrates

Chel-Jong Choi, V. Janardhanam, K. Shim, 2023, Electronics.

Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxy

S. G. Bishop, O. Gluschenkov, J. Myoung, 1997 .

Stress Effect Analysis for PD SOI pMOSFETs with Undoped-Si0.88Ge0.12 Heterostructure Channel

Kyu-Hwan Shim, Yong-Woo Hwang, Jae-Yeon Kim, 2007, IEICE Trans. Electron..

Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(001) and epi-CoSi2/Si0.83Ge0.17/Si(001) structures

M. Sardela, K. Shim, N.-E. Lee, 2004 .

Early stage of heteroepitaxial Ge growth on Si(100) substrate with surface treatments using inductively coupled plasma (ICP)

Chel-Jong Choi, Hyun-Duk Yang, K. Shim, 2011 .

Buffer layer strain transfer in AlN/GaN near critical thickness

I. Robinson, J. Myoung, K. Kim, 1999 .

Correlation of reverse leakage current conduction mechanism and electrostatic discharge robustness of transient voltage suppression diode

Chel-Jong Choi, Sangmoo Choi, Jeon-Wook Yang, 2014, Electronic Materials Letters.

Epitaxial growth of GaN on Si (100)/sapphire (0001) using RF plasma-assisted ionized source beam epitaxy

J. Verdeyen, M. Yoo, T. I. Kim, 1995 .

High quality p-type GaN films grown by plasma-assisted molecular beam epitaxy

O. Gluschenkov, J. Myoung, K. Kim, 1996 .

Low Resistance Ohmic Contact on p -type GaN Grown by Plasma-Assisted Molecular Beam Epitaxy

J. Myoung, K. Kim, M. Yoo, 1996 .

Carrier transport mechanism of Ni/Ag Schottky contacts to n-type GaN grown on Si(111) substrate

Chel-Jong Choi, Joohyun Jeong, H. Yun, 2014 .

Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE

S. G. Bishop, O. Gluschenkov, J. Myoung, 1996 .

Temperature-dependent current–voltage characteristics of Er-silicide Schottky contacts to strained Si-on-insulator

Chel-Jong Choi, Kwang-soon Ahn, M. Seo, 2013 .

Enhancement of Light Extraction from GaN-Based Light-Emitting Diodes by Coating Surface with Al2O3 Powder

G. Yang, Tae Ki Kim, J. Son, 2009 .