K. Shojiki

发表

Effect of c-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN

T. Hanada, Takeshi Kimura, T. Matsuoka, 2014 .

Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations

H. Amano, S. Kuboya, T. Matsuoka, 2017 .

Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy

T. Hanada, S. Kuboya, T. Matsuoka, 2016 .

High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire

S. Kuboya, H. Miyake, K. Uesugi, 2020, physica status solidi (b).

Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer

S. Kuboya, H. Miyake, K. Uesugi, 2020 .

Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures

Y. Hayashi, H. Miyake, K. Uesugi, 2019, Applied Physics Express.

Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells

M. Funato, Y. Kawakami, H. Miyake, 2019, AIP Advances.

Effect of MOVPE growth conditions on AlN films on annealed sputtered AlN templates with nano-striped patterns

S. Kuboya, H. Miyake, K. Uesugi, 2021 .

MOVPE growth of AlN films on nano-patterned sapphire substrates with annealed sputtered AlN

H. Miyake, K. Uesugi, K. Shojiki, 2020, Journal of Crystal Growth.

Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing

Y. Hayashi, T. Tohei, H. Miyake, 2021, AIP Advances.

Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar (000\bar{1}) GaN/sapphire

T. Hanada, Takeshi Kimura, S. Kuboya, 2014 .

Reduction of threading dislocation densities of N-polar face-to-face annealed sputtered AlN on sapphire

S. Kuboya, H. Miyake, K. Uesugi, 2021, Journal of Crystal Growth.

Effect of the Sputtering Deposition Conditions on the Crystallinity of High-Temperature Annealed AlN Films

S. Kuboya, H. Miyake, K. Uesugi, 2021, Coatings.

High‐Temperature Annealing of Sputter‐Deposited AlN on (001) Diamond Substrate

Y. Hayashi, H. Miyake, K. Uesugi, 2019, physica status solidi (b).

Tilted Domain and Indium Content of InGaN Layer on m-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy

T. Hanada, T. Matsuoka, Yuhuai Liu, 2012 .

Room-temperature blue-emitting high-beta gallium nitride nanobeam cavity lasers

S. Reitzenstein, J. Carlin, N. Grandjean, 2017 .

Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film

Y. Hayashi, H. Miyake, K. Uesugi, 2019, Journal of Crystal Growth.

Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy

Y. Hayashi, H. Miyake, K. Uesugi, 2019, Japanese Journal of Applied Physics.

Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range

J. Carlin, N. Grandjean, I. Rousseau, 2017 .

Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells

H. Akiyama, S. Yagi, H. Yaguchi, 2018 .

Red to blue wavelength emission of N-polar InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

T. Hanada, S. Kuboya, T. Matsuoka, 2015 .

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

T. Hanada, N. Usami, S. Kuboya, 2015 .

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

N. Grandjean, R. Butté, G. Callsen, 2020, ACS Photonics.

Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates

Y. Hayashi, Y. Nakajima, T. Tohei, 2023, Journal of electronic materials.

Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template

Y. Hayashi, H. Miyake, K. Uesugi, 2020 .

Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

A. Uedono, S. Chichibu, S. Ishibashi, 2020 .

Investigation of indium incorporation into InGaN by nitridation of sapphire substrate in MOVPE

T. Hanada, T. Matsuoka, T. Tanikawa, 2013 .

Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing

Y. Hayashi, H. Miyake, K. Uesugi, 2019, Journal of Crystal Growth.

Nanometer scale fabrication and optical response of InGaN/GaN quantum disks

P. Yu, I. Yamashita, A. Higo, 2016, Nanotechnology.

Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth

T. Hanada, Takeshi Kimura, T. Matsuoka, 2014 .

Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing

Y. Hayashi, H. Miyake, H. Yoshida, 2019, Journal of Crystal Growth.

Homogeneity improvement of N-polar InGaN/GaN multiple quantum wells by using c-plane sapphire substrate with off-cut-angle toward a-sapphire plane

T. Hanada, Y. Imai, S. Kimura, 2016 .

Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy

H. Miyake, K. Uesugi, K. Shojiki, 2019, Japanese Journal of Applied Physics.

Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing

H. Miyake, K. Uesugi, K. Shojiki, 2023, Materials Science in Semiconductor Processing.

229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide

M. Tonouchi, J. Tatebayashi, H. Miyake, 2023, Applied Physics Express.

Movpe Growth of Aln and Algan Films on N-Polar Annealed and Sputtered Aln Templates

H. Miyake, K. Uesugi, K. Shojiki, 2023, SSRN Electronic Journal.

263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities

Takao Nakamura, S. Kuboya, H. Miyake, 2022, Applied Physics Express.

Thick AlN layers grown on micro-scale patterned sapphire substrates with sputter-deposited annealed AlN films by hydride vapor-phase epitaxy

H. Miyake, K. Shojiki, S. Xiao, 2021, Journal of Crystal Growth.

Large Stokes-like shift in N-polar InGaN/GaN multiple-quantum-well light-emitting diodes

S. Kuboya, T. Matsuoka, T. Tanikawa, 2016 .

Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process

I. Yamashita, A. Higo, S. Samukawa, 2015, 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO).

Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar p-type GaN grown by metalorganic vapor phase epitaxy

S. Kuboya, T. Matsuoka, T. Tanikawa, 2016 .