Zhijian Yang

发表

Luminescence degradation of InGaN/GaN violet LEDs

Guoyi Zhang, Zhizhong Chen, Tongjun Yu, 2007 .

Analyses of surface temperatures on patterned sapphire substrate for the growth of GaN with metal organic chemical vapor deposition

Guoyi Zhang, Zhizhong Chen, Tongjun Yu, 2011 .

Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes

Ke Xu, Xiaodong Hu, Tongjun Yu, 2007 .

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

S. Fan, Tongjun Yu, Yang Wei, 2016, ACS applied materials & interfaces.

Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates

Ze Zhang, Guoyi Zhang, Y. Tong, 1999 .

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Ze Zhang, Guoyi Zhang, Zhijian Yang, 1998 .

Efficiency droop suppression of InGaN‐based blue light‐emitting diodes using dip‐shaped quantum wells

Zhizhong Chen, Jianping Wang, Huimin Lu, 2016 .

Influence of V/III flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCVD

Ke Xu, Tongjun Yu, Guoyi Zhang, 2007 .

The growth of high-quality and self-separation GaN thick-films by hydride vapor phase epitaxy

Tongjun Yu, Jiejun Wu, Guoyi Zhang, 2012 .

Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDs

Zhizhong Chen, Z. Qin, Guoyi Zhang, 2009 .

Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films

S. Fan, Yang Wei, Guoyi Zhang, 2012, Nano Research.

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal–organic vapor phase epitaxy

S. Fan, Yang Wei, Guoyi Zhang, 2012 .

Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels

Xiaodong Hu, Yahong Xie, Guoyi Zhang, 2012 .

Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact

Xiaodong Hu, Z. Qin, Z. Z. Chen, 2006 .

Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al0.15Ga0.85N Superlattice with AlN Interlayer

Xiaodong Hu, Jiejun Wu, Guoyi Zhang, 2013 .

The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates

Xiaodong Hu, Lei Li, Lei Wang, 2012 .

Vertical leakage induced current degradation and relevant traps with large lattice relaxation in AlGaN/GaN heterostructures on Si

Xiaodong Wang, W. Ge, Zonghai Hu, 2018 .

Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD

Guoyi Zhang, Xuelin Yang, Cunda Wang, 2014 .

Spontaneous luminescence polarizations of wurtzite InGaN/GaN quantum wells

Zhizhong Chen, Xiaodong Hu, Z. Qin, 2008 .

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Zhizhong Chen, G. Y. Zhang, B. Shen, 2006 .

Structural and luminescent properties of LnBaB9O16:Eu3+

Zhijian Yang, L. You, M. Su, 2000 .

Photon cascade luminescence of Gd3+ in GdBaB9O16

Zhijian Yang, M. Su, Wen Wang, 2000 .

Stress control and dislocation reduction in the initial growth of GaN on Si (111) substrates by using a thin GaN transition layer

Jiejun Wu, Zhijian Yang, Kun Wang, 2019, CrystEngComm.

Modified transmission line model to investigate non-Ohmic contact behavior and its application on GaN

Rui Li, Xiaodong Hu, Weixi Chen, 2007 .

Temperature-dependent polarization characteristics in Al0.25Ga0.75N/AlN/GaN heterostructure

Guoyi Zhang, B. Shen, X. Kang, 2016 .

Huabo Zhao, Rui Li, Xiaodong Hu, 2009 .

Evolution and control of dislocations in GaN grown on cone-patterned sapphire substrate by Metal Organic Vapor PhaseEpitaxy

Z. Z. Chen, Yanjie Wang, Zhijian Yang, 2011 .

Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges

Guoyi Zhang, Cunda Wang, Yan Zhang, 2017, Materials.

GaN nanorod array as a precursor to enhance GaN:Mn ferromagnetism

Guoyi Zhang, Cunda Wang, Yan Zhang, 2015 .

Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN

G. Qin, Weiqiang Sun, Y. Tong, 1999 .

Study of the leakage current mechanism in Schottky contacts to Al0.25Ga0.75N/GaN heterostructures with AlN interlayers

L. Sang, Sen Huang, Z. Qin, 2009 .

Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in AlxGa1−xN/GaN heterostructures

Z. Qin, N. Tang, B. Shen, 2007 .

Stimulated emission in GaN-based laser diodes far below the threshold region.

Weimin Du, Xiaodong Hu, Ya-Hong Xie, 2014, Optics express.

Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers

Xiaodong Hu, Z. Qin, Huan Wang, 2007 .

The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma

Xiaodong Hu, H. Pan, T. Dai, 2007 .

Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures

Xin-Zheng Li, W. Ge, P. Jin, 2014, Scientific Reports.

The Ga-Nitride/air Two-Dimensional Photonic Quasi-crystals Fabricated on GaN-based Light Emitters

Xiaodong Hu, Guoyi Zhang, Jun Xu, 2004 .

Focused ion beam etched nitride/air DBRs as cavity mirror facets of violet InGaN/GaN multiple-quantum well laser diodes

Ke Xu, Rui Li, Xiaodong Hu, 2007 .

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

S. Fan, Yang Wei, Hua Zong, 2016, ACS applied materials & interfaces.

Raman scattering and ferromagnetism of (Ga, Mn)N films grown by MOCVD

Jiejun Wu, Guoyi Zhang, Xuelin Yang, 2007 .

Magnetic and magneto-transport properties of Ga1−xMnxN grown by MOCVD

Jiejun Wu, Guoyi Zhang, Xuelin Yang, 2007 .

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

Shan Wu, Yue Xu, Bo Shen, 2019, Applied Sciences.