D. Hackler

Ultra-low-power, high-performance, dynamic-threshold digital circuits in the FlexFET independently-double-gated SOI CMOS technology

D. Hackler, D. DeGregorio, S. Parke, 2005, 2005 IEEE International SOI Conference Proceedings.

Complementary sidewall-spacer-diffused ultrashallow SD extension process for damascene independently-double-gated SOI CMOS

D. Hackler, S. Parke, M. Goldston, 2004, 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).

FlexFET: a low-cost planar, self-aligned independent-double-gate MOSFET with flexible, dynamic threshold control

D. Hackler, S. Parke, M. Goldston, 2005, 2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05..

Flexfet: A Low-Cost, Rad-Hard, Independent-Double-Gate SOI CMOS Technology with Flexible, Dynamic Reconfigurability

D. Hackler, S. Parke, M. Goldston, 2005, 2005 IEEE Aerospace Conference.

Flexfet: Independently-Double-Gated SOI Transistor With Variable Vt and 0.5V Operation Achieving Near Ideal Subthreshold Slope

D. Hackler, S. Parke, R. Hayhurst, 2007, 2007 IEEE International SOI Conference.

Design of a 32nm Independently-Double-Gated FlexFET SOI Transistor

D. Hackler, S. Parke, K. Modzelewski, 2008, 2008 17th Biennial University/Government/Industry Micro/Nano Symposium.