Yang Fei

Interface annealing characterization of Ti/Al/Au ohmic contacts to p-type 4H-SiC

Zhang Yuming, H.W.A. Chao, Song Qing-wen, 2015 .

Interface annealing characterization of Ti/Al/Au ohmic contacts to p-type 4H-SiC

Zhang Yuming, H.W.A. Chao, Song Qing-wen, 2015 .

Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Liu Bin, Wang Lei, Wang Zhanguo, 2013 .

Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study*

Wang Fangfang, Dejun Wang, Li Ling, 2017 .

Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD

Wang Lei, Yan Guoguo, Yang Fei, 2016 .

Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers

Yan Guoguo, Yang Fei, Dong Lin, 2013 .