Y. Zhang

发表

Design, fabrication and characterization of mesa combined with JTE termination for high-voltage 4H-SiC PiN diodes

Bo Zhang, Xiaochuan Deng, Chengzhan Li, 2015 .

SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode

B. Zhang, A. Huang, Bo Zhang, 2018, IEEE Transactions on Electron Devices.

A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs

B. Zhang, Wanjun Chen, Ximing Chen, 2017 .

Static and dynamic study in high-voltage 4H-SiC PiN rectifiers

Xuan Li, Xiaochuan Deng, Chengzhan Li, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

High current gain 4H-SiC bipolar junction transistor

B. Zhang, Y. Zhang, Guo Fei, 2016 .

Avalanche Ruggedness Assessment of 1.2kV 45mΩ Asymmetric Trench SiC MOSFETs

Bo Zhang, K. Zhou, Xuan Li, 2019 .

A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effect

Bo Zhang, Y. Zhang, Shuai Wang, 2022, Semiconductor Science and Technology.

Electro-thermal Analysis of 1.2kV-100A SiC JBS Diodes Under Surge Current Stress

Xinyu Liu, Hong Chen, Chengzhan Li, 2019, 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

6.5kV Silicon Carbide Discontinuous Trenched Junction Barrier Schottky Diode

Bo Zhang, Xuan Li, Xiaochuan Deng, 2019, 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-kV SiC JBS-Integrated MOSFETs

Bo Zhang, Wei Zhong, S. Bai, 2020, IEEE Transactions on Electron Devices.

The preparation of two inch double-sided YBCO thin films

B. Tao, Yuanxun Li, Y. Zhang, 2002 .

Silicon carbide bipolar junction transistor with novel emitter field plate design for high current gain and reliability

Hong Chen, Xiaochuan Deng, Jun-tao Li, 2019, Semiconductor Science and Technology.

High current gain 4H-SiC BJT for limiting surface states effect

Bo Zhang, Xiaochuan Deng, Y. Zhang, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Analysis of Short-Circuit Behavior for SiC MOSFETs with Various Circuit Characteristics

Bo Zhang, Xuan Li, Xiaochuan Deng, 2020, 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

The effect of the surface recombination on current gain for 4H-SiC BJT

Bo Zhang, Zhaoji Li, Xiaochuan Deng, 2009, 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).

4H-SiC BJTs with epitaxial junction termination composite structure

B. Zhang, Y. Zhang, B. Zhang, 2012 .

High temperature performance of 6500V 4H-SiC MOSFET With embedded schottky barrier diode

Bo Zhang, Y. Zhang, Shiyan Li, 2022, 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Investigation of Leakage Current Degradation Mechanism under Heavy Ions Irradiation in SiC Junction Barrier Schottky Diodes

Y. Zhang, Xiaoyu Yan, Maojiu Luo, 2022, 2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS).

A novel 4H-SiC PiN diode with improved forward conduction ability

Y. Zhang, Jiaming Luo, Hang Chen, 2020, 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Analysis of thermal characteristics of current gain for BJT-BSIT compound device

Bo Zhang, Zehong Li, Zhaoji Li, 2008, 2008 International Conference on Communications, Circuits and Systems.