Yu. N. Novikov

发表

First isochronous mass spectrometry at the experimental storage ring ESR

O. Klepper, C. Kozhuharov, H. Geissel, 2000 .

Modeling of a EEPROM device based on silicon quantum dots embedded in high-k dielectrics

Hei Wong, K. A. Nasyrov, V. A. Gritsenko, 2005 .

Schottky mass measurements of stored and cooled neutron-deficient projectile fragments in the element range of 57≤Z≤84

O. Klepper, C. Kozhuharov, H. Geissel, 2000 .

Short-Range Order , Large-Scale Potential Fluctuations , and Photoluminescence in Amorphous SiN x

V. A. Gritsenko, R. W. M. Kwok, Yu. N. Novikov, 2004 .

Two-bands charge transport in silicon nitride due to phonon-assisted trap ionization

K. A. Nasyrov, Vladimir A. Gritsenko, Y. Novikov, 2004 .

Excess silicon at the silicon nitride/thermal oxide interface in oxide–nitride–oxide structures

Hei Wong, Jianbin Xu, I. P. Petrenko, 1999 .

Nature of traps in gate silicon oxynitride of MOS devices

Jianbin Xu, Vladimir A. Gritsenko, Yu.N. Morokov, 1999, Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458).

Short-range order, large-scale potential fluctuations, and photoluminescence in amorphous SiNx

Vladimir A. Gritsenko, R. W. M. Kwok, I. Bello, 2004 .

Direct mass measurement of bare short-lived 44V, 48Mn, 41Ti and 45Cr ions with isochronous mass spectrometry

O. Klepper, C. Kozhuharov, H. Geissel, 2004 .

Two-fold coordinated nitrogen atom: an electron trap in MOS devices with silicon oxynitride as the gate dielectric

Hei Wong, Vladimir A. Gritsenko, Yu.N. Morokov, 1999 .

A new low voltage fast SONOS memory with high-k dielectric

Jo-Won Lee, K. A. Nasyrov, V. A. Gritsenko, 2003 .

Transport of charge and electronic structure of traps in SONOS structures

Hei Wong, Vladimir A. Gritsenko, Yu.N. Morokov, 1997, 1997 IEEE Hong Kong Proceedings Electron Devices Meeting.