B. Tormen

SON (silicon on nothing)-a new device architecture for the ULSI era

T. Skotnicki, R. Pantel, M. Jurczak, 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).

Heavily doped and extremely shallow junctions on insulator by SONCTION (SilicON Cut-off juncTION) process

T. Skotnicki, R. Pantel, R. Gwoziecki, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

A Self-Aligned, Electrically Separable Double-Gate MOS Transistor Technology for Dynamic Threshold Voltage Application

Michel Haond, Stephane Monfray, Thomas Skotnicki, 2003 .

High performance 40 nm vertical MOSFET within a conventional CMOS process flow

T. Skotnicki, A. Villaret, M. Jurczak, 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).

Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices

Stephane Monfray, Thomas Skotnicki, M. Jurczak, 2001 .

Dielectric pockets – a new concept of the junctions for deca-nanometric CMOS devices

T. Skotnicki, S. Monfray, D. Dutartre, 2000, 30th European Solid-State Device Research Conference.