Carl W. Chang

Processing and Characterization of Thousand-Hour 500 °C Durable 4H-SiC JFET Integrated Circuits

Glenn Beheim, Michael J. Krasowski, Liang-Yu Chen, 2016 .

4H-SiC JFET Multilayer Integrated Circuit Technologies Tested Up to 1000 K

Liang-Yu Chen, Glenn M. Beheim, David J. Spry, 2015 .

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Glenn M. Beheim, Philip G. Neudeck, David J. Spry, 2016 .

Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

Michael J. Krasowski, Roger D. Meredith, Liang-Yu Chen, 2008 .

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Michael J. Krasowski, Liang-Yu Chen, Glenn M. Beheim, 2016 .

Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Glenn M. Beheim, Philip G. Neudeck, David J. Spry, 2016, IEEE Electron Device Letters.

Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 °C Operation in Air Ambient

Roger D. Meredith, Liang-Yu Chen, Glenn M. Beheim, 2008 .