Chanho Park

AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature

Jung-Hee Lee, Ki-Sik Im, Jae-Hoon Lee, 2013, IEEE Transactions on Electron Devices.

Performance of Fully Recessed AlGaN/GaN MOSFET Prepared on GaN Buffer Layer Grown With AlSiC Precoverage on Silicon Substrate

Jung-Hee Lee, Jung-Hee Lee, Jae-Hoon Lee, 2013, IEEE Electron Device Letters.

Deep trench terminations using ICP RIE for ideal breakdown voltages

Do-Yeob Kim, Chanho Park, Tae-hoon Kim, 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..

A new junction termination technique using ICP RIE for ideal breakdown voltages

Nung-Pyo Hong, D. J. Kim, Kwyro Lee, 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.