R. Harris

Demonstration of High-Performance PMOSFETs Using $ \hbox{Si}$–$\hbox{Si}_{x}\hbox{Ge}_{1 - x}$ –$\hbox{Si}$ Quantum Wells With High- $\kappa$/Metal-Gate Stacks

R. Jammy, P. Majhi, R. Choi, 2008, IEEE Electron Device Letters.

Hot carrier degradation in HfSiON∕TiN fin shaped field effect transistor with different substrate orientations

Ji-Woon Yang, Hsing-Huang Tseng, Byoung Hun Lee, 2009 .

Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

G. Bersuker, M. Gardner, P. Zeitzoff, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

The effect of metal thickness, overlayer and high-k surface treatment on the effective work function of metal electrode

B.H. Lee, P. Majhi, P. Lysaght, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Growth mechanism of TiN film on dielectric films and the effects on the work function

Husam N. Alshareef, Hongfa Luan, Kisik Choi, 2005 .

Work function engineering using lanthanum oxide interfacial layers

Husam N. Alshareef, Byoung Hun Lee, Raj Jammy, 2006 .