Marko Tuominen

Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack

Mikael Östling, S.-L. Zhang, Per-Erik Hellström, 2005 .

Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Wilfried Vandervorst, Stefan De Gendt, Marc Heyns, 2004 .

Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

Wilfried Vandervorst, Marc Heyns, Matty Caymax, 2003 .

High k dielectric materials prepared by atomic layer CVD

Richard Carter, Guido Groeseneken, Wilfried Vandervorst, 2001 .

High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers

Tsunenobu Kimoto, Qamar Ul Wahab, Anne Henry, 1997 .