H. Karimy

Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain Performance

K.H.G. Duh, P. Seekell, P.C. Chao, 2008, IEEE Electron Device Letters.

50-NM SELF-ALIGNED HIGH ELECTRON-MOBILITY TRANSISTORS ON GaAs SUBSTRATES WITH EXTREMELY HIGH EXTRINSIC TRANSCONDUCTANCE AND HIGH GAIN

P. C. Chao, P. M. Smith, P. Seekell, 2011 .

THE FIRST 70NM 6-INCH GaAs PHEMT MMIC PROCESS

P. C. Chao, L. Gunter, P. Seekell, 2009 .

Scaling behaviors of 25-NM asymmetrically recessed metamorphic high electron-mobility transistors

K.H.G. Duh, P. Seekell, Dong Xu, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.