M. Marty

100GHz SiGe:C HBTs using non selective base epitaxy

D. Bensahel, M. Laurens, A. Chantre, 2001, 31st European Solid-State Device Research Conference.

OPTIMISATION OF THE MECHANICAL PROPERTIES OF A NEW PM SUPERALLOY FOR DISK APPLICATIONS

P. Caron, M. Marty, M. Marty, 2000 .

An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter

D. Dutartre, F. Saguin, A. Chantre, 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology

P. Chevalier, F. Leverd, D. Dutartre, 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.