Y. Manabe

Effect of Postdeposition Anneal Conditions on Defect Density of HfO2 Layers Measured by Wet Etching

S. De Gendt, Annelies Delabie, Chao Zhao, 2004 .

Monte Carlo simulation of stress-induced leakage current by hopping conduction via multi-traps in oxide

T. Kobayashi, S. Kamohara, K. Okuyama, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Scaling of high-k dielectrics towards sub-1nm EOT

S. De Gendt, D. Pique, S. Van Elshocht, 2003, 2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672).

A new data retention mechanism after endurance stress on flash memory

H. Kameyama, Hitoshi Kume, Shiro Kamohara, 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

Issues, achievements and challenges towards integration of high-k dielectrics

Richard Carter, Guido Groeseneken, L. Pantisano, 2002 .