N. Fichtenbaum

Plasma Treatment for Leakage Reduction in AlGaN/GaN and GaN Schottky Contacts

Rongming Chu, Likun Shen, S. Keller, 2008, IEEE Electron Device Letters.

High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate

S. Keller, N. Fichtenbaum, L. McCarthy, 2006, 2006 International Electron Devices Meeting.

Total GaN solution to electrical power conversion

Y.-F. Wu, P. Parikh, R. Coffie, 2011, 69th Device Research Conference.

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 2008 .

V-Gate GaN HEMTs for X-Band Power Applications

Rongming Chu, Likun Shen, S. Keller, 2008, IEEE Electron Device Letters.

Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment

S. Denbaars, T. Palacios, N. Fichtenbaum, 2006, IEEE Electron Device Letters.

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Umesh K. Mishra, S. P. DenBaars, Sarah L. Keller, 2008 .

Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors

En Xia Zhang, Xiao Shen, Christiane Poblenz, 2011 .